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ZXTN25020DFLTA

型号:

ZXTN25020DFLTA

描述:

20V , SOT23封装,低NPN功率晶体管[ 20V, SOT23, NPN low power transistor ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

8 页

PDF大小:

417 K

ZXTN25020DFL  
20V, SOT23, NPN low power transistor  
Summary  
BV  
BV  
BV  
> 100V  
> 20V  
> 5V  
CEX  
CEO  
ECO  
I
I
= 2A  
C(cont)  
= 8A  
CM  
V
< 70mV @ 1A  
CE(sat)  
CE(sat)  
R
= 55m  
P = 350mW  
D
Complementary part number ZXTP25020DFL  
Description  
C
E
Advanced process capability has been used to achieve high current gain  
hold up making this device ideal for applications requiring high pulse  
currents.  
B
Features  
High peak current  
Low saturation voltage  
100V forward blocking voltage  
Applications  
E
B
MOSFET and IGBT gate driving  
DC-DC conversion  
C
LED driving  
Interface between low voltage IC's and loads  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
ZXTN25020DFLTA  
7
8
3,000  
Device marking  
1A1  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  
ZXTN25020DFL  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
100  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
100  
20  
5
V
V
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
V
7
V
(a)  
I
I
2
A
Continuous collector current  
C
B
Base current  
500  
8
mA  
A
Peak pulse current  
I
CM  
(a)  
P
350  
mW  
D
Power dissipation at T  
Linear derating factor  
=25°C  
amb  
2.8  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
357  
°C/W  
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com  
ZXTN25020DFL  
Characteristics  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
3
www.zetex.com  
ZXTN25020DFL  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
BV  
100  
125  
V
I = 100A  
C
CBO  
CEX  
Collector-emitter breakdown BV  
voltage (forward blocking)  
100  
120  
V
I = 100 A; R < 1kor  
C
BE  
-1V < V  
< 0.25V  
BE  
(*)  
Collector-emitter breakdown BV  
voltage (base open)  
20  
6
35  
8
V
V
CEO  
ECX  
I = 10mA  
C
Emitter-collector breakdown BV  
voltage (reverse blocking)  
I = 100A, R < 1kor  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector breakdown BV  
voltage (base open)  
5
7
6
V
V
I = 100A,  
E
ECO  
EBO  
Emitter-base breakdown  
voltage  
BV  
8.3  
<1  
I = 100A  
E
Collector cut-off current  
I
I
I
50  
20  
nA  
A  
V
V
= 80V  
= 80V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector-emitter cut-off  
current  
-
100  
nA  
V
= 80V; R < 1kor  
CEX  
EBO  
CE BE  
-1V < V < 0.25V  
BE  
Emitter cut-off current  
<1  
60  
50  
70  
nA  
V
= 5.6V  
EB  
(*)  
Collector-emitter saturation  
voltage  
V
mV  
CE(SAT)  
I = 1A, I = 100mA  
C B  
(*)  
85  
100  
160  
225  
270  
mV  
mV  
mV  
mV  
I = 1A, I = 20mA  
C
B
(*)  
(*)  
140  
180  
245  
I = 2A, I = 40mA  
C
B
I = 2A, I = 20mA  
C
B
(*)  
I = 4,5A, I = 450mA  
C
B
(*)  
Base-emitter saturation  
voltage  
V
895 1000 mV  
BE(SAT)  
I = 2A, I = 40mA  
C B  
(*)  
Base-emitter turn-on voltage V  
825  
450  
350  
120  
215  
900  
900  
mV  
BE(ON)  
I = 2A, V = 2V  
C CE  
(*)  
Static forward current  
transfer ratio  
h
300  
220  
80  
FE  
I = 10mA, V = 2V  
C
CE  
(*)  
I = 2A, V = 2V  
C
CE  
(*)  
I = 4.5A, V = 2V  
C
CE  
Transition frequency  
Output capacitance  
f
MHz I = 50mA, V = 10V  
T
C
CE  
f = 100MHz  
(*)  
C
16.5  
25  
pF  
OBO  
V
V
= 10V, f = 1MHz  
CB  
CC  
Delay time  
Rise time  
t
t
t
t
67.7  
72.2  
361  
ns  
ns  
ns  
ns  
= 10V. I = 1A,  
C
(d)  
I
= I = 10mA.  
B2  
B1  
(r)  
(s)  
(f)  
Storage time  
Fall time  
63.9  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ 2%.  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  
ZXTN25020DFL  
Typical characteristics  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
5
www.zetex.com  
ZXTN25020DFL  
Package outline - SOT23  
E
e
e1  
b
3 leads  
D
L1  
E1  
A
L
c
A1  
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com  
ZXTN25020DFL  
regonaly authorized dstrbuorsFor a complete istInngteofnatuitohnorazleldydlesfritbubtloarsnpklease vist: w.t.to
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com  
ZXTN25020DFL  
Issue 4 - January 2007  
© Zetex Semiconductors plc 2007  
8
www.zetex.com  
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