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ZXTP2012ASTOA

型号：

ZXTP2012ASTOA

描述：

60V PNP低饱和中功率晶体管E-LINE[ 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

6 页

PDF大小：

115 K

下载PDF手册
ZXTP2012A  
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE  
SUMMARY  
BVCEO = -60V : RSAT = 38m ; IC = -3.5A  
DESCRIPTION  
Packaged in the E-line outline this new low saturation 60V PNP transistor  
offers extremely low on state losses making it ideal for use in DC-DC circuits  
and various driving and power management functions.  
FEATURES  
E-line  
• 3.5 amps continuous current  
• Up to 15 amps peak current  
• Very low saturation voltages  
• Excellent gain up to 10 amps  
APPLICATIONS  
• DC - DC converters  
• MOSFET gate drivers  
• Power switches  
• Motor control  
ORDERING INFORMATION  
DEVICE  
QUANTITY PER REEL  
PINOUT  
ZXTP2012ASTOA  
ZXTP2012ASTZ  
2,000 units / reel  
2,000 units / carton  
DEVICE MARKING  
ZXT  
P20  
12  
TOP VIEW  
ISSUE 2 - NOVEMBER 2005  
1
SEMICONDUCTORS  
ZXTP2012A  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
LIMIT  
-100  
-60  
UNIT  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
BV  
BV  
BV  
V
CBO  
CEO  
EBO  
V
-7  
V
A
(a)  
Continuous collector current  
I
I
-3.5  
C
Peak pulse current  
-15  
A
CM  
(a)  
Practical power dissipation at T =25°C  
A
P
1.0  
W
D
Linear derating factor  
(b)  
8
mW/°C  
W
Power dissipation at T =25°C  
A
P
0.71  
5.7  
D
Linear derating factor  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to 150  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
125  
UNIT  
°C/W  
°C/W  
(a)  
Junction to ambient  
R
R
⍜JA  
⍜JA  
(b)  
Junction to ambient  
175  
NOTES  
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
Collector lead length to solder point 4mm.  
(b)For a device mounted in a socket in still air conditions. Collector lead length 10mm.  
ISSUE 2 - NOVEMBER 2005  
2
SEMICONDUCTORS  
ZXTP2012A  
CHARACTERISTICS  
ISSUE 2 - NOVEMBER 2005  
3
SEMICONDUCTORS  
ZXTP2012A  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
amb  
SYMBOL  
PARAMETER  
MIN.  
-100  
-100  
-60  
TYP. MAX. UNIT CONDITIONS  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
BV  
BV  
BV  
BV  
-120  
-120  
-80  
V
V
I =-100␮A  
C
CBO  
CER  
CEO  
EBO  
I =-1␮A, RBՅ1k⍀  
C
V
I =-10mA*  
C
-7  
-8.1  
Ͻ1  
V
I =-100␮A  
E
I
-20  
-0.5  
-20  
nA  
␮A  
nA  
␮A  
nA  
V
V
V
V
=-80V  
CB  
CBO  
=-80V, T  
=100ЊC  
=100ЊC  
CB  
amb  
Collector cut-off current  
I
Ͻ1  
=-80V  
CER  
CB  
RՅ1k⍀  
-0.5  
-10  
=-80V, T  
CB  
amb  
Emitter cut-off current  
I
Ͻ1  
-14  
-50  
V
=-6V  
EB  
EBO  
Collector-emitter saturation voltage  
V
-20  
mV I =-0.1A, I =-10mA*  
C B  
CE(SAT)  
-65  
mV I =-1A, I =-100mA*  
C B  
-80  
-115  
-210  
mV I =-2A, I =-200mA*  
C B  
-145  
mV I =-4A, I =-400mA*  
C B  
Base-emitter saturation voltage  
Base-emitter turn-on voltage  
V
V
h
-960 -1060 mV I =-4A, I =-400mA*  
C B  
BE(SAT)  
BE(ON)  
FE  
-850  
250  
200  
120  
25  
-960  
mV I =-4A, V =-1V*  
C CE  
Static forward current transfer ratio  
100  
100  
65  
I =-10mA, V =-1V*  
C CE  
300  
I =-1A, V =-1V*  
C
CE  
I =-4A, V =-1V*  
C
CE  
10  
I =-10A, V =-1V*  
C CE  
Transition frequency  
f
120  
MHz I =-100mA, V =-10V  
T
C
CE  
f=50MHz  
Output capacitance  
Switching times  
C
48  
39  
pF  
V
=-10V, f=1MHz*  
CB  
OBO  
t
t
ns I =-1A, V =-10V,  
ON  
C
CC  
370  
I
=I =-100mA  
B1 B2  
OFF  
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.  
ISSUE 2 - NOVEMBER 2005  
4
SEMICONDUCTORS  
ZXTP2012A  
TYPICAL CHARACTERISTICS  
ISSUE 2 - NOVEMBER 2005  
5
SEMICONDUCTORS  
ZXTP2012A  
PACKAGE OUTLINE  
Controlling dimensions are in millimeters. Approximate conversions are given in inches  
PACKAGE DIMENSIONS  
Millimeters  
Inches  
DIM  
Min  
0.41  
0.41  
3.61  
4.37  
2.16  
—
Max  
Min  
Max  
0.0195  
0.0195  
0.158  
0.188  
0.095  
0.098  
A
B
C
D
E
F
0.495  
0.495  
4.01  
4.77  
2.41  
2.50  
0.016  
0.016  
0.142  
0.172  
0.085  
—
G
L
1.27 NOM  
0.050 NOM  
13.00  
13.97  
0.512  
0.550  
© Zetex Semiconductors plc 2005  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Semiconductors plc  
Zetex Technology Park  
Chadderton, Oldham, OL9 9LL  
United Kingdom  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 2 - NOVEMBER 2005  
6
SEMICONDUCTORS  
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