TM
CZT2000
Ce n t r a l
S e m ic o n d u c t o r Co r p .
NPN SILICON
EXTREMELY HIGH VOLTAGE
DARLINGTON TRANSISTOR
DESCRIPTION:
TheCENTRALSEMICONDUCTORCZT2000
type is an NPN Epitaxial Planar Silicon
Darlington Transistor manufactured in an
epoxy molded surface mount package,
designed for applications requiring extremely
high voltages and high gain capability.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
200
200
10
600
2.0
V
V
V
mA
W
CBO
CES
EBO
I
P
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
-65 to +150
62.5
C
C/W
J stg
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
500
100
UNITS
I
I
V
V
=180V
=10V
nA
nA
V
V
V
CBO
EBO
CES
CE(SAT)
CE(SAT)
CE(SAT)
BE(ON)
FE
CB
BE
BV
V
V
V
V
h
h
h
I =1.0mA
200
C
I =20mA, I =25µA
0.9
1.1
1.2
2.0
C
B
B
B
C
I =80mA, I =40µA
C
I =160mA, I =100µA
V
V
C
V
=5.0V, I =160mA
CE
CE
CE
CE
V
V
V
=5.0V, I =100µA
3,000
3,000
3,000
C
=5.0V, I =10mA
FE
C
=5.0V, I =160mA
C
FE
298
