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IXGT60N60B2

型号：

IXGT60N60B2

描述：

优化为10-25千赫硬开关和高达100KHz的谐振开关[ Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

579 K

下载PDF手册
Advance Technical Data  
HiPerFASTTM IGBT  
VCES  
IC25  
= 600 V  
= 75 A  
IXGH 60N60B2  
IXGT 60N60B2  
VCE(sat) < 1.8 V  
tfityp = 100 ns  
Optimized for 10-25 kHz hard  
switching and up to 100 KHz  
resonant switching  
TO-268  
(IXGT)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
75  
60  
300  
A
A
A
TO-247 AD  
(IXGH)  
TAB)  
SSOA  
(RBSOA)  
PC  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600 V  
TC = 25°C  
ICM = 150  
A
G
C
E
500  
W
G = Gate,  
C = Collector,  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
E = Emitter,  
TAB = Collector  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
Medium frequency IGBT  
Square RBSOA  
z
z
z
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
High current handling capability  
MOS Gate turn-on  
Weight  
TO-247 AD  
6
4
g
g
- drive simplicity  
TO-268 SMD  
Applications  
z
PFC circuits  
z
Uninterruptible power supplies (UPS)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
Switched-mode and resonant-mode  
power supplies  
z
AC motor speed control  
z
DC servo and robot drives  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
z
DC choppers  
VCE = V  
T = 25°C  
50  
µA  
VGE = 0CVES  
TJJ = 150°C  
1
100  
1.8  
mA  
nA  
V
IGES  
VCE = 0 V, VGE = 20 V  
VCE(sat)  
IC = 50 A, VGE = 15 V  
Note 1.  
TJ = 25°C  
© 2003 IXYS All rights reserved  
DS99113(11/03)  
IXGH 60N60B2  
IXGT 60N60B2  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
IC = 50 A; VCE = 10 V,  
Note 1  
40  
58  
S
∅ P  
Cies  
Coes  
Cres  
3900  
290  
100  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
170  
25  
57  
nC  
nC  
nC  
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A12  
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
td(off)  
tfi  
28  
30  
ns  
ns  
A
Inductive load, TJ = 25°C  
IC = 50 A, VGE = 15 V  
b
160 270 ns  
100 170 ns  
1.0 2.5 mJ  
b
b12  
VCE = 400 V, RG = 3.3 Ω  
C
D
E
.4  
.8  
Note 1  
Eoff  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
Eon  
td(off)  
tfi  
28  
36  
0.6  
310  
240  
2.8  
ns  
ns  
mJ  
ns  
ns  
e
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Inductive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
L
.780 .800  
.177  
.140 .144  
L1  
∅P 3.55  
Q
R
S
3.65  
VCE = 400 V, RG = 3.3 Ω  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
Note 1  
Eoff  
mJ  
RthJC  
RthCK  
0.25 K/W  
K/W  
TO-268 Outline  
0.15  
Notes:  
1. Pulse test, t < 300µs wide, duty cycle < 2%.  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 60N60B2  
IXGT 60N60B2  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
350  
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
9V  
13V  
11V  
13V  
11V  
9V  
7V  
7V  
5V  
5V  
5
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
0
-50  
4
1
2
3
4
6
7
8
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
9V  
VGE = 15V  
11V  
IC = 100A  
7V  
IC = 50A  
IC = 25A  
5V  
1
1.5  
2
2.5  
3
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
300  
250  
200  
150  
100  
50  
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
TJ = 25ºC  
IC = 100A  
50A  
25A  
TJ = 125ºC  
TJ = 25ºC  
-40ºC  
0
5
6
7
8
9
10  
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGH 60N60B2  
IXGT 60N60B2  
Fig. 8. Dependence of Turn-Off  
Energy on RG  
Fig. 7. Transconductance  
10  
9
8
7
6
5
4
3
2
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
TJ = -40ºC  
25ºC  
125ºC  
IC = 100A  
IC = 50A  
IC = 25A  
0
20  
0
50  
100  
150  
200  
250  
300  
0
5
10 15 20 25 30 35 40 45 50  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Ene r gy on Ic  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
IC = 100A  
IC = 50A  
TJ = 125ºC  
TJ = 25ºC  
IC = 25A  
30  
40  
50  
60  
70  
80  
90  
100  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on Ic  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
400  
350  
300  
250  
200  
150  
100  
50  
td(off)  
td(off)  
tfi - - - - - -  
tfi - - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
TJ = 125ºC  
IC = 25A  
IC = 50A  
TJ = 25ºC  
IC = 100A  
5
10 15 20 25 30 35 40 45 50  
20  
30  
40  
50  
60  
70  
80  
90  
100  
R G - Ohms  
I C - Amperes  
IXGH 60N60B2  
IXGT 60N60B2  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
15  
12  
9
VCE = 300V  
IC = 50A  
IG = 10mA  
td(off)  
IC = 25A  
50A  
tfi - - - - - -  
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
100A  
6
IC = 100A  
50A  
3
25A  
0
25 35 45 55 65 75 85 95 105 115 125  
0
20  
40  
60  
80 100 120 140 160 180  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
0.275  
0.25  
0.225  
0.2  
0.175  
0.15  
0.125  
0.1  
0.075  
0.05  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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