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IXGH32N170

型号：

IXGH32N170

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

578 K

下载PDF手册
IXGH 32N170 VCES  
IXGT 32N170 IC25  
= 1700 V  
75 A  
High Voltage  
IGBT  
=
VCE(sat) = 3.3 V  
tfi(typ)  
= 250 ns  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C (TAB)  
TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
75  
32  
200  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 5 Ω  
I
= 90  
A
(RBSOA)  
CGlaE mped inductive load  
@ 0C.8M VCES  
350  
G
C
E
PC  
TC = 25°C  
W
G = Gate,  
E=Emitter,  
Features  
C = Collector,  
TAB = Collector  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
International standard packages  
JEDEC TO-268 and  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
JEDEC TO-247 AD  
z
z
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
High current handling capability  
MOS Gate turn-on  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
- drive simplicity  
z
z
Rugged NPT structure  
Molding epoxies meet UL 94 V-0  
flammability classification  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Applications  
z
Capacitor discharge & pulser circuits  
z
AC motor speed control  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
DC servo and robot drives  
z
DC choppers  
z
Uninterruptible power supplies (UPS)  
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1700  
3.0  
V
z
ICC = 250 µA, VCE = VGE  
5.0  
V
Switched-mode and resonant-mode  
power supplies  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
TJJ = 125°C  
50  
1
µA  
Advantages  
mA  
z
High power density  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100  
3.3  
nA  
z
Suitable for surface mounting  
z
VCE(sat)  
T = 25°C  
TJJ = 125°C  
2.5  
3.0  
V
V
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
DS98941B(11/03)  
© 2003 IXYS All rights reserved  
IXGH 32N170  
IXGT 32N170  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
gfs  
IC = IC90; V = 10 V,  
22  
30  
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %  
∅ P  
IC(ON)  
VGE = 10V, VCE = 10V  
120  
A
Cies  
Coes  
Cres  
3500  
165  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
e
Qg  
Qge  
Qgc  
155  
30  
51  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Min.  
Max.  
Min. Max.  
A
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
A
A12  
td(on)  
tri  
td(off)  
tfi  
45  
38  
270  
250  
11  
ns  
ns  
500 ns  
500 ns  
20 mJ  
b
Inductive load, TJ = 25°C  
b
b12  
IC = IC90, VGE = 15 V  
VCE = 0.6 VCES, RG = Roff = 2.7 Ω  
C
D
E
.4  
.8  
20.80 21.46  
15.75 16.26  
Eoff  
e
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
L
.780 .800  
.177  
.140 .144  
L1  
td(on)  
tri  
Eon  
td(off)  
tfi  
48  
42  
6.0  
360  
560  
ns  
ns  
mJ  
ns  
ns  
∅P 3.55  
Q
R
S
3.65  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
VCE = 0.6 VCES, RG = Roff = 2.7 Ω  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
TO-268 Outline  
Eoff  
14  
mJ  
RthJC  
0.35 K/W  
RthCK  
(TO-247)  
0.25  
K/W  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Min Recommended Footprint  
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
A1  
A2  
b
1.15  
1.9  
.4  
1.45  
.045 .057  
b2  
2.1  
.75  
.83  
C
.65  
.016 .026  
D
E
13.80 14.00  
.543 .551  
.624 .632  
.524 .535  
15.85 16.05  
E1  
13.3  
13.6  
e
H
L
5.45 BSC  
.215 BSC  
.736 .752  
.094 .106  
18.70 19.10  
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80  
4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXGH 32N170  
IXGT 32N170  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
64  
56  
48  
40  
32  
24  
16  
8
240  
210  
180  
150  
120  
90  
VGE = 17V  
15V  
VGE = 17V  
15V  
13V  
11V  
13V  
11V  
9V  
9V  
7V  
60  
7V  
30  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
2
4
6
8
10  
12  
14  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
64  
56  
48  
40  
32  
24  
16  
8
1.8  
1.6  
1.4  
1.2  
1
VGE = 17V  
15V  
VGE = 15V  
13V  
11V  
9V  
7V  
IC = 64A  
IC = 32A  
IC = 16A  
0.8  
0.6  
0
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 25ºC  
IC = 64A  
32A  
TJ = 125ºC  
25ºC  
-40ºC  
16A  
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
5
6
7
8
9
10  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGH 32N170  
IXGT 32N170  
Fig. 7. Transconductance  
Fig. 8. Dependence of E on RG  
off  
25  
23  
21  
19  
17  
15  
13  
11  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = 125ºC  
GE = 15V  
VCE = 1020V  
V
TJ = -40ºC  
IC = 64A  
25ºC  
125ºC  
IC = 32A  
IC = 16A  
0
0
16  
0
16  
32  
48  
64  
80  
96  
0
10  
20  
30  
40  
50  
I C - Amperes  
R G - Ohms  
Fig. 10. Dependence of E on  
off  
Fig. 9. Dependence of Eoff on Ic  
Temperature  
22  
20  
18  
16  
14  
12  
10  
8
22  
20  
18  
16  
14  
12  
10  
8
RG = 3Ω  
RG = 15Ω  
VGE = 15V  
VCE = 1020V  
RG = 3Ω  
RG= 15Ω  
- - - - -  
- - - - -  
IC = 64A  
TJ = 125ºC  
VGE = 15V  
VCE = 1020V  
IC = 32A  
IC = 16A  
TJ = 25ºC  
24  
32  
40  
48  
56  
64  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
15  
12  
9
10000  
1000  
100  
f = 1 MHz  
VCE = 850V  
IC= 32A  
IG= 10mA  
C
ies  
C
oes  
6
C
res  
3
0
10  
30  
60  
90  
120  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXGH 32N170  
IXGT 32N170  
Fig. 13. Maxim um Transient Therm al Resistance  
0.4  
0.3  
0.2  
0.1  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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