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IXGH28N120B

型号：

IXGH28N120B

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

575 K

下载PDF手册
IXGH 28N120B VCES = 1200 V  
IXGT 28N120B IC25  
50 A  
High Voltage IGBT  
=
VCE(sat) = 3.5 V  
tfi(typ) = 160 ns  
TO-268(IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C (TAB)  
TAB)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
50  
28  
150  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 5 Ω  
I
= 120  
A
(RBSOA)  
CGlaE mped inductive load  
@C0M.8 VCES  
250  
G
C
E
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
Features  
ꢀ
High Voltage IGBT for resonant  
power supplies  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
- Induction heating  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- Rice cookers  
ꢀ
International standard packages  
JEDEC TO-268 and  
JEDEC TO-247 AD  
ꢀ
ꢀ
Low switching losses, low V(sat)  
MOS Gate turn-on  
- drive simplicity  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
BVCES  
VGE(th)  
I
= 250 µA , VGE = 0 V  
1200  
2.5  
V
ICC = 250 µA, VCE = VGE  
5
V
ꢀ
High power density  
ꢀ
Suitable for surface mounting  
ꢀ
ICES  
VCE = VCES, VGE= 0 V  
TJ = 25°C  
TJ = 125°C  
25  
µA  
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 28A, VGE = 15 V  
100  
3.5  
nA  
VCE(sat)  
2.8  
V
V
2.75  
© 2004 IXYS All rights reserved  
DS98987E(04/04)  
IXGH 28N120B  
IXGT 28N120B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 28A; VCE = 10 V,  
15  
23  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
1700  
120  
45  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
92  
13  
35  
nC  
nC  
nC  
IC = 28A, VGE = 15 V, VCE = 0.5 VCES  
e
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A12  
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
td(off)  
tfi  
30  
20  
210  
170  
2.2  
ns  
ns  
280 ns  
320 ns  
5.0 mJ  
A
Inductive load, TJ = 25°C  
b
IC = 28 A, VGE = 15 V  
b
b12  
VCE = 0.8 VCES, RG = Roff = 5 Ω  
C
D
E
.4  
.8  
Eoff  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
Eon  
35  
28  
0.3  
ns  
ns  
mJ  
mJ  
ns  
ns  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Inductive load, TJ = 125°C  
IC = 28A, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 5 Ω  
∅P 3.55  
Q
R
S
3.65  
.140 .144  
28N120B  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
28N120BD1 1.4  
5.49  
.170 .216  
242 BSC  
td(off)  
tfi  
250  
340  
TO-268 Outline  
Eoff  
4.6  
mJ  
RthJC  
RthCK  
0.5 K/W  
K/W  
(TO-247)  
0.25  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Min Recommended Footprint  
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
A1  
A2  
b
1.15  
1.9  
.4  
1.45  
.045 .057  
b2  
2.1  
.75  
.83  
C
.65  
.016 .026  
D
E
13.80 14.00  
.543 .551  
.624 .632  
.524 .535  
15.85 16.05  
E1  
13.3  
13.6  
e
H
L
5.45 BSC  
.215 BSC  
.736 .752  
.094 .106  
18.70 19.10  
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80  
4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGH 28N120B  
IXGT 28N120B  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
56  
49  
42  
35  
28  
21  
14  
7
240  
210  
180  
150  
120  
90  
V
= 15V  
13V  
11V  
V
= 17V  
GE  
GE  
15V  
13V  
9V  
7V  
11V  
9V  
60  
30  
5V  
4
7V  
0
0
1
1
6
1.5  
2
2.5  
3
3.5  
4.5  
5
0
-50  
4
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
@ 125 C  
56  
49  
42  
35  
28  
21  
14  
7
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
13V  
GE  
V
= 15V  
GE  
I
= 56A  
C
11V  
9V  
7V  
I
I
= 28A  
= 14A  
C
C
5V  
0
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 25ºC  
T
J
I
= 56A  
28A  
C
14A  
T = 125ºC  
J
25ºC  
-40ºC  
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
5
6
7
8
9
10  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGH 28N120B  
IXGT 28N120B  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
T = -40ºC  
35  
30  
25  
20  
15  
10  
5
18  
16  
14  
12  
10  
8
J
T = 125ºC  
J
I
= 56A  
C
25ºC  
125ºC  
V
= 15V  
GE  
CE  
V
= 960V  
I
I
= 28A  
= 14A  
C
C
6
4
2
0
0
0
10 20 30 40 50 60 70 80 90 100  
0
10 20 30 40 50 60 70 80 90 100  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
11  
10  
9
10  
9
8
7
6
5
4
3
2
1
0
R
= 5Ω  
G
T = 125ºC  
J
R
= 5Ω  
G
I
= 56A  
C
V
= 15V  
GE  
V
= 15V  
GE  
= 960V  
V
CE  
= 960V  
8
V
CE  
7
6
I
= 28A  
= 14A  
5
C
4
T = 25ºC  
J
3
2
1
I
C
0
10 15 20 25 30 35 40 45 50 55 60  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1400  
1200  
1000  
800  
450  
400  
350  
300  
250  
200  
150  
100  
td(off)  
tfi  
- - - - - -  
td(off)  
T = 125ºC  
J
tfi  
- - - - - -  
V
V
= 15V  
GE  
R
= 5Ω  
G
= 960V  
T = 125ºC  
J
CE  
V
GE  
V
CE  
= 15V  
= 960V  
600  
I
= 56A  
C
I
= 14A  
I
= 28A  
C
C
T = 25ºC  
J
400  
200  
0
10 20 30 40 50 60 70 80 90 100  
10 15 20 25 30 35 40 45 50 55 60  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGH 28N120B  
IXGT 28N120B  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
450  
400  
350  
300  
250  
200  
150  
100  
16  
14  
12  
10  
8
td(off)  
V
= 600V  
CE  
I
= 56A  
tfi  
- - - - - -  
C
I
I
= 28A  
C
G
R
= 5Ω  
G
= 10mA  
I
= 14A  
C
V
GE  
V
CE  
= 15V  
= 960V  
I
= 28A  
C
6
4
I
= 14A  
C
2
I
= 56A  
C
0
25 35 45 55 65 75 85 95 105 115 125  
0
10 20 30 40 50 60 70 80 90 100  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
1000  
100  
140  
120  
100  
80  
f = 1 MHz  
C
ies  
60  
C
oes  
= 125ºC  
T
40  
J
R
= 5Ω  
G
20  
dV/dT < 10V/ns  
C
res  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
300  
500  
700  
900  
1100  
1300  
VC E - Volts  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.50  
0.10  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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