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PZTA43

型号：

PZTA43

描述：

高压晶体管[ HIGH VOLTAGE TRANSISTOR ]

品牌：

UTC[ Unisonic Technologies ]

页数：

3 页

PDF大小：

75 K

下载PDF手册
UTCPZTA42/43  
NPNEPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE TRANSISTOR  
DESCRIPTION  
The UTC PZTA42/43 are high voltage transistors,  
designed for telephone switch and high voltage  
switch.  
3
2
1
FEATURES  
*Collector-Emitter voltage:  
VCEO=300V(UTC PZTA42)  
VCEO=200V(UTC PZTA43)  
*High current gain  
4
*Complement to UTC PZTA92/93  
*Collector Power Dissipation:  
Pc(max)=1000mW  
SOT-223  
1:EMITTER 2,4:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
V
Collector-Base Voltage  
UTC PZTA42  
UTC PZTA43  
Collector-Emitter Voltage  
VCBO  
300  
200  
V
UTC PZTA42  
UTC PZTA43  
VCEO  
300  
200  
Emitter-Base Voltage  
Collector Power Dissipation  
Collector Current  
Junction Temperature  
Storage Temperature  
VEBO  
Pc  
Ic  
Tj  
TSTG  
6
V
mW  
mA  
°C  
1000  
500  
150  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-Base Breakdown Voltage  
UTC PZTA42  
SYMBOL  
BVCBO  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Ic=100µA,IE=0  
300  
200  
V
UTC PZTA43  
Collector-Emitter Breakdown Voltage  
BVCEO  
BVEBO  
Ic=1mA,IB=0  
UTC PZTA42  
300  
200  
6
V
V
UTC PZTA43  
Emitter-Base Breakdown Voltage  
IE=100µA,Ic=0  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R207-005,B  
UTCPZTA42/43  
NPNEPITAXIAL SILICON TRANSISTOR  
PARAMETER  
Collector Cut-Off Current  
UTC PZTA42  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
ICBO  
VCB=200V,IE=0  
VCB=160V,IE=0  
100  
100  
nA  
nA  
UTC PZTA43  
Emitter Cut-Off Current  
IEBO  
hFE  
UTC PZTA42  
VBE=6V,Ic=0  
VBE=4V,Ic=0  
100  
100  
UTC PZTA43  
DC Current Gain(note)  
VCE=10V,Ic=1mA  
VCE=10V,Ic=10mA  
VCE=10V,Ic=30mA  
Ic=20mA,IB=2mA  
Ic=20mA,IB=2mA  
VCE=20V,Ic=10mA,  
f=100MHz  
80  
80  
80  
300  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
VCE(sat)  
VBE(sat)  
fT  
0.2  
0.90  
V
V
MHz  
50  
Collector Base Capacitance  
UTCPZTA42  
UTCPZTA43  
Ccb  
VCB=20V,IE=0  
f=1MHz  
3
4
pF  
TYPICAL PERFORMANCE CHARACTERISTICS  
Fig.1 DC Current Gain  
Fig.2 Saturation Voltage  
3
1
10  
10  
Ic=10*I  
B
VCE=10V  
VBE(sat)  
2
0
10  
10  
-1  
10  
1
10  
VCE(sat)  
0
-2  
10  
10  
0
1
2
-1  
0
1
2
3
10  
10  
10  
10  
10  
10  
10  
10  
Collector current, Ic(mA)  
Collector current, Ic(mA)  
Fig.4 Current Gain  
Bandwidth product  
Fig.3 Capacitance  
2
10  
3
10  
VCE=20V  
I
E
=0  
f=1MHz  
1
2
10  
10  
1
10  
-1  
0
1
2
10  
0
1
2
10  
10  
10  
10  
10  
10  
Collector-Base voltage(V)  
Collector current, Ic(mA)  
2
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R207-005,B  
UTCPZTA42/43  
NPNEPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
3
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R207-005,B  
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