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PZTA42

型号:

PZTA42

描述:

NPN硅平面外延型晶体管[ NPN Silicon Planar Epitaxial Transistor ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

3 页

PDF大小:

216 K

PZTA42  
NPN Silicon Planar Epitaxial Transistor  
COLLECTOR  
2, 4  
4
1. BASE  
2.COLLECTOR  
3.EMITTER  
4.COLLECTOR  
BASE  
1
1
2
3
3
SOT-223  
EMITTER  
ABSOLUTE MAXIMUM RATINGS  
(Ta=25 C)  
Symbol  
Unit  
V
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Value  
300  
300  
6
V
CEO  
V
CBO  
V
V
V
EBO  
I
500  
Collector Current (DC)  
mA  
C(DC)  
P
Total Device Disspation TA=25˚C  
Junction Temperature  
W
˚C  
˚C  
2
D
Tj  
150  
Storage, Temperature  
-55 to +150  
Tstg  
Device Marking  
PZTA42=A42  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol Min  
Typ  
Max  
Unit  
Collector-Emitter Breakdown Voltage  
C
V(BR)CEO  
300  
-
-
-
-
V
(I =1mA)  
Collector-Base Breakdown Voltage  
V
V
V(BR)CBO  
V(BR)EBO  
ICBO  
300  
(I =100µA)  
C
Emitter-Base Breakdown Voltage  
6
-
-
-
-
-
(I =10 µA)  
E
Collector-Emitter Cutoff Current  
(V =300V)  
CB  
100  
100  
nA  
nA  
Emitter-Base Cutoff Current  
IEBO  
-
(V =6V)  
EB  
WEITRON  
http://www.weitron.com.tw  
1/3  
02-Jun-05  
PZTA42  
ON CHARACTERISTICS  
DC Current Gain  
(VCE = 10V,IC = 1mA)  
(VCE = 10V,IC = 10mA)  
(VCE = 10V,IC = 30mA)  
-
-
-
-
-
-
-
-
-
hFE1  
hFE2  
hFE3  
25  
40  
40  
Collector-Emitter Saturation Voltages  
(IC = 20mA, IB = 2mA)  
VCE(sat)  
VBE(sat)  
-
-
-
-
500  
900  
mV  
mV  
Base-Emitter Saturation Voltages  
(IC = 20mA, IB = 2mA)  
DYNAMIC CHARACTERISTICS  
Current-Gain—Bandwidth Product  
fT  
50  
-
-
-
MHz  
pF  
-
(VCE = 20V, IC = 10mA, f = 100MHz)  
Output Capacitance  
(VCB = 20 Vdc, f = 1MHz)  
3
Cob  
Typical Characteristics  
80  
70  
60  
50  
40  
30  
20  
10  
120  
Tj= 125 ˚C  
100  
80  
25 ˚C  
60  
40  
-55 ˚C  
T =25 ˚C  
j
VCE=20V  
f=100MHz  
20  
0
0.1  
1.0  
10  
100  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
IC, COLLECTOR CURRENT (mA)  
Ic, COLLECTOR CURRENT (mA)  
Figure .1 DC Current Gain  
Figure .2 Current-Gain-Bandwidth  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
VCE(sat)@25 ˚C, ICIB = 10  
VCE(sat)@125 ˚C, ICIB =10  
VCE(sat)@ -55 ˚C, ICIB=10  
VBE(sat)@25 ˚C, ICIB = 10  
VBE(sat)@125 ˚C, ICIB =10  
VBE(sat)@ -55 ˚C, ICIB =10  
VBE(on)@25 ˚C, VCE = 10V  
VBE(on)@125 ˚C, VCE = 10V  
VBE(on)@-55 ˚C, VCE = 10V  
00  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (mA)  
C
Figure.3 "On"Voltages  
WEITRON  
http://www.weitron.com.tw  
2/3  
02-Jun-05  
PZTA42  
SOT-223 Outline Dimensions  
unit:mm  
MILLIMETERS  
A
F
MIN  
6.30  
3.30  
1.50  
0.60  
2.90  
2.20  
MAX  
6.70  
3.70  
1.75  
0.89  
3.20  
2.40  
DIM  
A
B
C
D
F
G
H
J
K
L
4
S
B
1
2
3
D
0.020 0.100  
L
G
0.24  
1.50  
0.85  
0
0.35  
2.00  
1.05  
10  
J
C
M
M
S
H
K
6.70  
7.30  
WEITRON  
http://www.weitron.com.tw  
3/3  
02-Jun-05  
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