IXFR 4N100Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247TM Outline
VDS = 10 V; ID = IT
Notes 2, 3
1.5
2.5
S
Ciss
Coss
Crss
1050
120
30
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 2 Ω (External), Notes 2, 3
Terminals: 1-Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
39
9
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Notes 2, 3
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
22
nC
1.57 K/W
K/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
RthJC
RthCK
0.15
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
Symbol
TestConditions
IS
VGS = 0 V
4
16
A
A
V
See IXFH4N100Q data sheet for
Characterisiticcurves.
ISM
VSD
Repetitive; Note 1
IF = IS, VGS = 0 V, Notes 2, 3
1.5
trr
250 ns
QRM
IRM
0.52
1.8
µC
IF = 50A,-di/dt = 100 A/µs, VR = 100 V
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 2 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
