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FZT3019_06

型号:

FZT3019_06

描述:

NPN通用放大器[ NPN General Purpose Amplifier ]

品牌:

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数:

4 页

PDF大小:

188 K

April 2006  
FZT3019  
tm  
NPN General Purpose Amplifier  
4
Features  
This device is designed for general purpose medium power amplifiers and  
switches requiring collector currents to 500 mA and collector voltages up to 80 V.  
3
2
Sourced from process 12.  
1
SOT-223  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
80  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
V
140  
7.0  
V
Collector current - Continuous  
1.0  
A
TJ, Tstg  
Junction and Storage Temperature  
-55 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Sustaining Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 30 mA, I = 0  
80  
140  
7.0  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 100 µA, I = 0  
E
= 100 µA, I = 0  
Vn  
C
I
V
V
= 90 V, I = 0  
10  
10  
nA  
µA  
CB  
CB  
E
= 90 V, I = 0, T = 150°C  
E
a
I
Emitter-Cutoff Current  
V
= 5 V,  
10  
nA  
EBO  
EB  
On Characteristics  
h
DC Current Gain  
I
I
I
I
I
= 0.1 mA, V = 10 V  
50  
90  
100  
50  
FE  
C
C
C
C
C
CE  
= 10 mA, V = 10 V  
CE  
= 150 mA, V = 10 V  
300  
CE  
= 500 mA, V = 10 V  
CE  
= 1.0 A, V = 10 V  
15  
CE  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
= 150 mA, I = 15 mA  
0.2  
0.5  
V
V
CE(sat)  
BE(sat)  
C
C
B
= 500 mA, I = 50 mA  
B
I
= 150 mA, I = 15 mA  
1.1  
V
C
B
Small Signal Characteristics  
f
Current Gain - Bandwidth Product  
Collector-Base Capacitance  
Input Capacitance  
I
= 50 mA, V = 10 V, f = 20 MHz  
100  
80  
MHz  
pF  
T
C
CE  
C
C
V
V
= 10 V, I = 0, f = 1.0 MHz  
12  
60  
cob  
ibo  
CB  
BE  
E
= 0.5 V, I = 0, f = 1.0 MHz  
pF  
E
h
Small Signal current Gain  
I
= 50 mA, V = 10 V,  
400  
fe  
C
CE  
f = 20 MHz  
rb’Cc  
NF  
Collector Base Time Constant  
Noise Figure  
I
I
= 10 mA, V = 10 V, f = 4.0 MHz  
400  
4.0  
pS  
dB  
C
CB  
= 100 mA, V = 10 V,  
C
CE  
R
= 1.0k, f = 1.0KHz  
S
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
©2006 Fairchild Semiconductor Corporation  
FZT3019 Rev. B  
1
www.fairchildsemi.com  
Thermal Characteristics Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Max.  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
1.0  
8.0  
W
mW/°C  
RθJA  
NOTES :  
*
Thermal Resistance, Junction to Ambient  
125  
°C/W  
2
* Device mounted on FR-4 PCB 36mm × 18mm ×1.5mm, Mounting Pad for the collector lead is 600mm  
2
www.fairchildsemi.com  
FZT3019 Rev. B  
Package Dimensions  
SOT-223  
3.00 0.10  
MAX1.80  
+0.04  
–0.02  
0.06  
2.30 TYP  
4.60 0.25  
0.70 0.10  
(0.95)  
°
~10  
°
0
+0.10  
–0.05  
(0.95)  
0.25  
6.50 0.20  
Dimensions in Millimeters  
3
www.fairchildsemi.com  
FZT3019 Rev. B  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to  
be an exhaustive list of all such trademarks.  
®
ACEx™  
FAST  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
PowerEdge™  
PowerSaver™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TCM™  
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
CROSSVOLT™  
DOME™  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
®
PowerTrench  
®
QFET  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
ScalarPump™  
SILENT SWITCHER  
SMART START™  
SPM™  
®
HiSeC™  
TinyLogic  
2
EcoSPARK™  
I C™  
MSXPro™  
OCX™  
TINYOPTO™  
TruTranslation™  
UHC™  
2
E CMOS™  
i-Lo™  
EnSigna™  
FACT™  
ImpliedDisconnect™  
IntelliMAX™  
OCXPro™  
OPTOLOGIC  
®
®
UltraFET  
®
FACT Quiet Series™  
OPTOPLANAR™  
PACMAN™  
POP™  
UniFET™  
VCX™  
Wire™  
Across the board. Around the world.™  
®
The Power Franchise  
Programmable Active Droop™  
Power247™  
Stealth™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY  
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT  
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX-  
PAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN,  
WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support  
or sustain life, or (c) whose failure to perform when properly used  
in accordance with instructions for use provided in the labeling,  
can be reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In  
Design  
This datasheet contains the design specifications for product  
development. Specifications may change in any manner with-  
out notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and supplementary  
data will be published at a later date. Fairchild Semiconductor  
reserves the right to make changes at any time without notice  
in order to improve design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild Semi-  
conductor reserves the right to make changes at any time  
without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product that has  
been discontinued by Fairchild semiconductor. The datasheet  
is printed for reference information only.  
Rev. I19  
4
www.fairchildsemi.com  
FZT3019 Rev. B  
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