IXFC 26N50
IXFC 24N50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS220 OUTLINE
VDS = 15 V; ID = IT
Note 1
11
21
S
Ciss
Coss
Crss
4200
450
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
135
td(on)
tr
td(off)
tf
16
33
65
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External),
Qg(on)
Qgs
135
28
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
62
RthJC
RthCK
0.54 K/W
K/W
0.30
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note: All terminals are solder plated.
1 - Gate
2-Drain
3-Source
Symbol
TestConditions
IS
VGS = 0 V
26
A
A
ISM
Repetitive; pulse width limited by TJM
104
VSD
trr
IF = IS, VGS = 0 V, Note 1
1.5
V
TJ = 25°C
TJ = 125°C
250
400
ns
ns
IF = Is, -di/dt = 100 A/µs,
VR = 100 V
QRM
IRM
TJ = 25°C
TJ = 125°C
1
2
1
µC
µC
TJ = 25°C
TJ = 125°C
10
15
A
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.IT testcurrent:
IXFC26N50
IXFC24N50
IT = 13A
IT = 12A
3. SeeIXFH26N50datasheetforcharacteristiccurves.
IXYSreservestherighttochangelimits, testconditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
