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PZT3906

型号：

PZT3906

描述：

PNP硅晶体管开关[ PNP Silicon Switching Transistor ]

品牌：

INFINEON[ Infineon ]

页数：

5 页

PDF大小：

123 K

下载PDF手册
PNP Silicon Switching Transistor  
PZT 3906  
● High DC current gain 0.1 mA to 100 mA  
● Low collector-emitter saturation voltage  
● Complementary type: PZT 3904 (NPN)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
4
PZT 3906  
ZT 3906  
Q62702-Z2030  
B
C
E
C
SOT-223  
Maximum Ratings  
Parameter  
Symbol  
Values  
40  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
EB0  
V
V
V
40  
5
IC  
200  
1.5  
mA  
W
P
tot  
Total power dissipation, T  
S
= 80 ˚C  
Junction temperature  
Tj  
150  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 117  
≤ 47  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1
PZT 3906  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V
V
V
(BR)CE0  
(BR)CB0  
(BR)EB0  
40  
40  
5
–
–
–
–
–
–
–
V
I
C
= 1 mA, I  
Collector-base breakdown voltage  
= 10 µA, I = 0  
Emitter-base breakdown voltage  
= 10 µA, I = 0  
Collector-base cutoff current  
= 0  
Collector-emitter cutoff current  
B
= 0  
–
IC  
B
–
IE  
C
ICB0  
ICEV  
IBEV  
–
50  
50  
50  
nA  
V
CB = 30 V, I  
E
–
VCE = 30 V, + VBE = 0.5 V  
Collector-base cutoff current  
–
VCE = 30 V, + VBE = 0.5 V  
DC current gain1)  
h
FE  
–
60  
80  
100  
60  
30  
–
–
–
–
–
–
–
300  
–
–
IC  
IC  
IC  
IC  
IC  
= 0.1 mA, VCE = 1 V  
= 1 mA, VCE = 1 V  
= 10 mA, VCE = 1 V  
= 50 mA, VCE = 1 V  
= 100 mA, VCE = 1 V  
Collector-emitter saturation voltage1)  
V
CEsat  
BEsat  
V
I
C
= 10 mA, I  
B
= 1 mA  
= 5 mA  
–
–
–
–
0.25  
0.4  
IC  
= 50 mA, I  
B
Base-emitter saturation voltage1)  
V
I
C
= 10 mA, I  
C
= 1 mA  
= 5 mA  
–
–
–
–
0.85  
0.95  
IC  
= 50 mA, I  
C
1)  
Pulse test conditions: t ≤ 300 µs, D = 2 %  
Semiconductor Group  
2
PZT 3906  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
AC characteristics  
Transition frequency  
f
T
250  
–
–
–
–
–
–
MHz  
pF  
I
C
= 10 mA, VCE = 20 V, f = 100 MHz  
Collector-base capacitance  
CB = 5 V, f= 1 MHz  
Input capacitance  
EB = 0.5 V, f= 1 MHz  
Noise figure  
= 100 µA, VCE = 5 V, R  
C
C
F
obo  
4.5  
10  
4
V
ibo  
–
V
–
dB  
IC  
S
= 1 kΩ,  
f= 10 Hz to 15.7 kHz  
Input impedance  
h11e  
h12e  
h21e  
h22e  
2
–
–
–
–
12  
kΩ  
10– 4  
–
IC  
= 1 mA, VCE = 10 V, f= 1 kHz  
Open-circuit reverse voltage transfer ratio  
= 1 mA, VCE = 10 V, f= 1 kHz  
Short-circuit forward current transfer ratio  
= 1 mA, VCE = 10 V, f= 1 kHz  
Open-circuit output admittance  
= 1 mA, VCE = 10 V, f= 1 kHz  
0.1  
100  
3
10  
IC  
400  
60  
IC  
µS  
IC  
V
CC = 3 V, I  
C
= 10 mA, IB1 = 1 mA  
V
BE(off) = 0.5 V  
Delay time  
Rise time  
t
t
d
–
–
–
–
35  
35  
ns  
ns  
r
V
CC = 3 V, I  
C
= 10 mA, IB1 = IB2 = 1 mA  
Storage time  
Fall time  
t
t
stg  
f
–
–
–
–
225  
75  
ns  
ns  
(see diagrams)  
Semiconductor Group  
3
PZT 3906  
Switching Times  
Turn-on time when switched from + VBEoff = 0.5 V to – VBEon = 10.6 V, – ICon = 10 mA;  
– IBon = 1 mA  
Input waveform; tr < 1 ns; t  
δ = 0.02.  
p
= 300 ns;  
Delay and rise time test circuit; total shunt  
capacitance of test jig and connectors  
CS < 4 pF; scope impedance = 10 MΩ.  
Turn-off time ICon = 10 mA; IBon = – IBoff = 1 mA  
Input waveform; tf < 1 ns; 10 µs < tp ≤ 500 µs; Storage and fall time test circuit; total shunt  
δ = 0.02.  
capacitance of test jig and connectors  
S < 4 pF; scope impedance = 10 MΩ.  
C
Semiconductor Group  
4
PZT 3906  
Total power dissipation Ptot = f (T  
A
*; TS  
)
Saturation voltage I = f (VBEsat, VCEsat)  
C
* Package mounted on epoxy  
hFE = 10  
DC current gain hFE = f (I  
C
)
Permissible pulse load Ptot max / Ptot DC = f (t )  
p
V
CE = 1 V, normalized  
Semiconductor Group  
5
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