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PZT3904

型号:

PZT3904

描述:

硅NPN开关晶体管[ NPN Silicon Switching Transistor ]

品牌:

INFINEON[ Infineon ]

页数:

5 页

PDF大小:

51 K

PZT3904  
NPN Silicon Switching Transistor  
High DC current gain: 0.1mA to 100mA  
Low collector-emitter saturation voltage  
Complementary type: PZT3906 (PNP)  
4
3
2
1
VPS05163  
Type  
Marking  
Pin Configuration  
2 = C 3 = E  
Package  
PZT3904  
ZT 3904  
1 = B  
4 = C  
SOT223  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
DC collector current  
40  
60  
V
V
V
V
CEO  
CBO  
EBO  
6
200  
mA  
W
I
C
1.5  
Total power dissipation, T = 72 °C  
P
tot  
S
Junction temperature  
Storage temperature  
150  
°C  
T
j
-65 ... 150  
T
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
52  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Nov-30-2001  
PZT3904  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC Characteristics  
Collector-emitter breakdown voltage  
40  
60  
6
-
-
-
-
-
-
-
V
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
I = 1 mA, I = 0  
C
B
-
Collector-base breakdown voltage  
I = 10 µA, I = 0  
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
-
E
C
Collector cutoff current  
= 30 V, I = 0  
-
50  
50  
50  
nA  
I
CBO  
V
CB  
E
Collector-emitter cutoff current  
= 30 V, -V = 0.5 V  
-
I
CEV  
V
CE  
BE  
Base-emitter cutoff current  
= 30 V, -V = 0.5  
-
I
BEV  
V
CE  
BE  
DC current gain 1)  
I = 0.1 mA, V = 1 V  
-
h
FE  
40  
70  
-
-
-
-
-
-
C
CE  
I = 1 mA, V = 1 V  
-
C
CE  
I = 10 mA, V = 1 V  
100  
60  
300  
C
CE  
I = 50 mA, V = 1 V  
-
-
C
CE  
I = 100 mA, V = 1 V  
30  
C
CE  
Collector-emitter saturation voltage1)  
I = 10 mA, I = 1 mA  
V
V
CEsat  
BEsat  
-
-
-
-
0.2  
0.3  
C
B
I = 50 mA, I = 5 mA  
C
B
Base-emitter saturation voltage 1)  
I = 100 mA, I = 1 mA  
V
-
-
-
-
0.85  
0.9  
C
B
I = 50 mA, I = 5 mA  
C
B
1) Pulse test: t =300µs, D = 2%  
2
Nov-30-2001  
PZT3904  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
Transition frequency  
300  
-
-
-
-
-
4
8
5
MHz  
pF  
f
T
I = 10 mA, V = 20 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 5 V, f = 1 MHz  
-
-
-
C
cb  
V
CB  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
C
eb  
V
EB  
Noise figure  
I = 100 µA, V = 5 V, R = 1 k ,  
dB  
F
C
CE  
S
f = 10Hz to 15.7kHz,  
Short-circuit input impedance  
I = 1 mA, V = 10 V, f = 1 kHz  
1
0.5  
100  
1
-
-
-
-
-
10  
8
h
k
11e  
C
CE  
-4  
Open-circuit reverse voltage transf.ratio  
I = 1 mA, V = 10 V, f = 1 kHz  
10  
h
12e  
C
CE  
Short-circuit forward current transf.ratio  
I = 1 mA, V = 10 V, f = 1 kHz  
400  
40  
35  
-
h
21e  
C
CE  
Open-circuit output admittance  
h
S
22e  
I = 1 mA, V = 10 V, f = 1 kHz  
C
CE  
Delay time  
-
ns  
t
d
V
V
= 3 V, I = 10 mA, I = 1 mA,  
CC  
C
B1  
= 0.5 V  
BE(off)  
Rise time  
-
-
35  
t
r
V
V
= 3 V, I = 10 mA, I = 1 mA,  
CC  
C
B1  
= 0.5 V  
BE(off)  
Storage time  
= 3 V, I = 10 mA, I =I = 1mA  
-
-
-
-
200  
50  
t
stg  
V
CC  
C
B1 B2  
Fall time  
= 3 V, I = 10 mA, I =I = 1mA  
t
f
V
CC  
C
B1 B2  
3
Nov-30-2001  
PZT3904  
Test circuits  
Delay and rise time  
+3.0 V  
275  
300 ns  
D = 2%  
+10.9 V  
10 kΩ  
0
C
-0.5 V  
<4.0 pF  
<1.0 ns  
EHN00061  
Storage and fall time  
+3.0 V  
10 < t1 < 500 µs  
D = 2%  
275 Ω  
t 1  
+10.9 V  
10 kΩ  
0
C
<4.0 pF  
-9.1  
V
1N916  
<1.0 ns  
EHN00062  
4
Nov-30-2001  
PZT3904  
Total power dissipation P = f(T )  
Saturation voltage I = f (V  
, V  
)
tot  
S
C
BEsat CEsat  
h
= 10  
FE  
PZT 3904  
EHP00711  
2
1650  
mW  
mA  
102  
ΙC  
1350  
1200  
1050  
900  
750  
600  
450  
300  
150  
0
5
VCE  
VBE  
101  
5
100  
0
15 30 45 60 75 90 105 120  
150  
0
0.2  
0.4  
0.6  
0.8  
1.0 V 1.2  
°C  
T
S
VBE sat,VCE sat  
Permissible pulse load  
DC current gain h = f (I )  
FE  
C
P
/ P  
= f (t )  
V
= 10V, normalized  
totmax  
totDC  
p
CE  
PZT 3904  
EHP00712  
101  
PZT 3904  
EHP00293  
5
Ptotmax  
PtotDC  
t p  
t p  
T
5
D
=
hFE  
T
102  
D
0
=
125 ˚C  
25 ˚C  
0.005  
5
0.01  
0.02  
0.05  
100  
5
0.1  
0.2  
0.5  
-55 ˚C  
101  
5
100  
10-1  
10-6 10-5  
10-4 10-3  
10-2  
s
100  
10 -1  
5 10 0  
5 10 1  
mA 10 2  
t p  
Ι C  
5
Nov-30-2001  
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