WT4884AM
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
V =0V, I =250 uA
V
(BR)DSS
-
1.6
-
-
V
V
30
1
D
GS
Gate-Source Threshold Voltage
V =V , I =250 uA
V
3
GS (th)
D
DS GS
Gate-Source Leakage Current
+
-
I
-
GSS
100
nA
uA
+
-
GS
V =0V,V = 20V
DS
Zero Gate Voltage Drain Current
V =24V,V =0V
I
-
-
DSS
1
DS
GS
rDS (on)
Drain-Source On-Resistance
V =10V, I =12A
mΩ
-
-
6
7
GS
D
V =4.5V, I =10A
8.5
11
GS
D
On-State Drain Current
V =10V,V =10V
I
D(on)
-
-
20
-
A
S
DS
GS
Forward Transconductance
V =15V, I =12A
g
fs
-
22
DS
D
(3)
Dynamic
Input Capacitance
V =15V,V =0V, f=1MHZ
C
-
-
-
iss
-
-
3150
680
DS
GS
Output Capacitance
V =15V,V =0V, f=1MHZ
C
oss
F
P
DS
GS
Reverse Transfer Capacitance
V =15V,V =0V, f=1MHZ
C
rss
510
-
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
27
13
V
=10V,V =15V, I =1A, R =6Ω
GS
DD
D
GEN
Rise Time
V
t
r
=10V,V =15V, I =1A, R =6Ω
GS
DD
D
GEN
Turn-Off Time
V
t
nS
nS
127.5
55.5
d(off)
-
-
=10V,V =15V, I =1A, R =6Ω
GS
DD
D
GEN
Fall Time
V
t
f
=10V,V =15V, I =1A, R =6Ω
GS
DD
D
GEN
Total Gate Charge
V =15V, I =12A,V =10V
nc
-
-
65
GS
-
-
DS
D
Qg
V =15V, I =12A,V =4.5V
30.5
GS
DS
D
Gate-Source Charge
V =15V, V =10V, I =12A
Qgs
-
-
11
13
nc
nc
-
-
DS
GS
D
Gate-Drain Charge
V =15V, V =10V, I =12A
Qgd
DS
GS
D
Diode Forward Voltage
Drain-Source
-
0.75
1.2
VSD
V
V =0V, I =1.7A
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
01-Aug-05
