WT4433AM
Electrical Characteristics (TA =25 C Unless otherwise noted)
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
V =0V, I =-250 uA
V
(BR)DSS
-
-1.9
-
-
V
V
-30
-1
D
GS
Gate-Source Threshold Voltage
V =V , I =-250 uA
V
GS (th)
-3.0
D
DS GS
Gate-Source Leakage Current
+
-
I
-
-
GSS
100
nA
uA
+
-
GS
V =0V, V = 20V
DS
Zero Gate Voltage Drain Current
V =-24V, V =0V
I
-
DSS
-1
DS
GS
Drain-Source On-Resistance
V =-10V, I =-5.8A
-
-
21
40
RDS (on)
mΩ
GS
D
V =-4.5V, I =-2.0A
55
-
GS
D
On-State Drain Current
V =-5V, V =-10V
I
D(on)
-
-20
-
A
S
DS
GS
Forward Transconductance
V =-15V, I =-5.8A
g
fs
-
8.5
DS
D
(3)
Dynamic
Input Capacitance
V =-15V, V =0V, f=1MHZ
C
-
-
-
iss
920
270
170
-
-
DS
GS
Output Capacitance
V =-15V, V =0V, f=1MHZ
C
oss
F
P
DS
GS
Reverse Transfer Capacitance
V =-15V, V =0V, f=1MHZ
C
rss
-
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
8.6
V =-15V, V
=-10V, I =-1A, R
=6Ω
=6Ω
=6Ω
=6Ω
D
GEN
D
GEN
GEN
GEN
GEN
Rise Time
t
r
35.3
V =-15V, V
D
=-10V, I =-1A, R
GEN
D
Turn-Off Time
V =-15V, V
t
nS
nS
36.9
36.3
d(off)
-
-
=-10V, I =-1A, R
D
GEN
D
Fall Time
t
f
V =-15V, V
D
=-10V, I =-1A, R
GEN
D
Total Gate Charge
-
-
17.5
9.4
-
-
V =-15V, V =-10V, I =-5.8A
Qg
DS
GS
D
nc
V =-15V, V =-4.5V, I =-5.8A
DS
GS
D
Gate-Source Charge
V =-15V, V =-10V, I =-5.8A
Qgs
-
-
2.9
4.8
nc
nc
-
-
DS
GS
D
Gate-Drain Charge
V =-15V, V =-10V, I =-5.8A
Qgd
DS
GS
D
Diode Forward Voltage
Drain-Source
-
-0.77
-1.2
VSD
V
V =0V, I =-1.7A
GS
S
Note:
1. Surface Mounted on FR4 Board t ≤ 10sec.
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
29-Jun-05
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