WT4410M
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
=0V, I =250 uA
V
(BR)DSS
-
1.5
-
-
V
V
30
1
V
D
GS
Gate-Source Threshold Voltage
=V , I =250 uA
V
3
GS (th)
V
D
DS GS
Gate-Source Leakage Current
+
-
I
-
GSS
100
nA
uA
+
=0V,V = 16V
-
GS
V
DS
Zero Gate Voltage Drain Current
=24V,V =0V
I
-
-
DSS
1
V
DS
GS
rDS (on)
Drain-Source On-Resistance
mΩ
-
-
11
15
V
V
=10V, I =10A
GS
GS
D
=4.5V, I =5A
20
-
D
On-State Drain Current
=10V,V =10A
I
D(on)
-
40
-
A
S
V
DS
GS
Forward Transconductance
g
fs
-
18
V
=10V, I =20A
DS
D
(3)
Dynamic
Input Capacitance
C
-
-
-
iss
-
-
1375
670
V
=15V,V =0V, f=1MHZ
DS
GS
Output Capacitance
=15V,V =0V, f=1MHZ
C
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
V
C
rss
200
-
=15V,V =0V, f=1MHZ
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
30
32
V
=10V,V =15V, I =-1A, R =6Ω
GEN
GS
DD
D
Rise Time
V
t
r
=10V,V =15V, I =-1A, R =6Ω
GEN
GS
DD
D
Turn-Off Time
V
t
nS
nS
132
30
d(off)
-
-
=10V,V =15V, I =-1A, R =6Ω
GEN
GS
DD
D
Fall Time
t
f
V
=10V,V =15V, I =-1A, R =6Ω
GEN
GS
DD
D
Total Gate Charge
Qg
nc
-
-
V
=10V, I =10A,V =10V
GS
D
40
20
50
24
DS
V
=10V, I =10A,V =4.5V
GS
DS
D
Gate-Source Charge
=10V, I =10A,V =10V
Qgs
-
-
8.2
5.3
nc
nc
-
-
V
GS
DS
D
Gate-Drain Charge
Qgd
V
=10V, I =10A,V =10V
GS
D
DS
Diode Forward Voltage
Drain-Source
-
0.76
1.1
VSD
V
V
=0V, I =2.3A
S
GS
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
01-Jul-05
