WT9435M
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
=0V, I =-250 uA
V
(BR)DSS
-
-1.5
-
-
V
V
-30
-1
-
V
D
GS
Gate-Source Threshold Voltage
=V , I =-250 uA
V
-2.5
GS (th)
V
D
DS GS
Gate-Source Leakage Current
I
+
-
GSS
100
nA
uA
+
=0V,V = 20V
-
GS
V
DS
Zero Gate Voltage Drain Current
=-24V,V =0V
I
-
-
DSS
-1
V
DS
GS
rDS (on)
Drain-Source On-Resistance
mΩ
-
-
45
75
V
V
=-10V, I =-5.3A
GS
GS
D
=-4.5V, I =-4.2A
85
-
D
On-State Drain Current
=-5V,V =-10A
I
D(on)
-
-20
-
A
S
V
DS
GS
Forward Transconductance
g
fs
-
5
V
=-5V, I =-5.3A
DS
D
(3)
Dynamic
Input Capacitance
C
-
-
-
iss
-
-
582
125
86
V
=-15V,V =0V, f=1MHZ
DS
GS
Output Capacitance
=-15V,V =0V, f=1MHZ
C
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
V
C
rss
-
=-15V,V =0V, f=1MHZ
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
9
V
Ω
=-10V,V =-15V, I =--1A, R =15 ,R =6Ω
L
GEN
GEN
DD
D
Rise Time
V
t
10
r
Ω
=-10V,V =-15V, I =--1A, R =15 ,R =6Ω
L
GEN
GEN
DD
D
Turn-Off Time
V
t
nS
nS
37
23
d(off)
-
-
Ω
=-10V,V =-15V, I =--1A, R =15 ,R =6Ω
L
GEN
GEN
DD
D
Fall Time
t
f
V
Ω
=-10V,V =-15V, I =--1A, R =15 ,R =6Ω
L
GEN
GEN
DD
D
Total Gate Charge
Qg
nc
-
-
-
-
V
=-15V, I =-5.3A,V =-10V
GS
D
11.7
5.7
DS
V
=-15V, I =-5.3A,V =-4.5V
GS
DS
D
Gate-Source Charge
=-15V, I =-5.3A,V =-10V
Qgs
-
-
2.1
2.9
nc
nc
-
-
V
GS
DS
D
Gate-Drain Charge
=-15V, I =-5.3A,V =-10V
Qgd
V
GS
DS
D
Diode Forward Voltage
Drain-Source
-
-0.84
-1.2
VSD
V
V
=0V, I =-1.7A
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
01-Jul-05
