WTE
POWER SEMICONDUCTORS
Pb
SB10150F
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
B
!
!
!
!
!
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D
ITO-220A
C
Dim
A
B
C
D
E
Min
14.60
9.70
2.55
3.56
13.00
0.30
3.00 Ø
6.30
4.20
2.50
0.36
2.90
4.83
Max
15.40
10.30
2.85
G
F
A
PIN1
3
4.16
13.80
0.90
F
G
H
I
3.50 Ø
6.90
Mechanical Data
!
!
E
Case: ITO-220A, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
4.80
P
J
2.90
K
L
0.80
!
!
!
!
!
I
3.30
P
5.33
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 +
PIN 3 -
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB10150F
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
RMS Reverse Voltage
VR(RMS)
IO
105
10
V
A
Average Rectified Output Current
@TL = 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
I
FSM
150
A
Forward Voltage
@IF = 10A
VFM
IRM
0.92
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
50
mA
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Cj
700
4.0
pF
°C/W
°C
RꢀJC
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB10150F
1 of 4
© 2006 Won-Top Electronics
