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IXFN23N100

型号：

IXFN23N100

描述：

HiPerFET -TM功率MOSFET[ HiPerFET-TM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

89 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
VDSS  
ID25  
RDS(on)  
IXFN 24N100 1000 V 24 A  
IXFN 23N100 1000 V 23 A  
0.39 Ω  
0.43 Ω  
t ≤ 250 ns  
êê  
Single MOSFET Die  
Preliminary data sheet  
miniBLOC,SOT-227B(IXFN)  
E153432  
Symbol TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
S
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
24N100  
23N100  
24N100  
23N100  
24  
23  
96  
92  
24  
A
A
A
A
A
TC = 25°C; Note 1  
TC = 25°C  
G = Gate  
S = Source  
D = Drain  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
báíÜÉê=pçìêÅÉ=íÉêãáå~ä=~í=ãáåá_il`=Å~å=ÄÉ=ìëÉÇ  
~ë=j~áå=çê=hÉäîáå=pçìêÅÉ  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
5
V/ns  
Features  
PD  
TC = 25°C  
600  
W
• International standard package  
• Encapsulating epoxy meets  
UL 94 V-0, flammability classification  
• miniBLOC with Aluminium nitride  
isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
• Low package inductance  
• Fast intrinsic Rectifier  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
VISOL  
50/60 Hz, RMS  
ISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
I
Md  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Applications  
• DC-DC converters  
• Synchronous rectification  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
• DC choppers  
• Temperature and lighting controls  
• Low voltage relays  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min.  
1000  
3.0  
Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VGS = 0V  
V
V
5.0  
±100 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 µA  
Advantages  
2
mA  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25  
Note 2  
23N100  
24N100  
0.43  
0.39  
Ω
Ω
«=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ  
VURVTa= ENMLMMF  
IXFN 23N100  
IXFN 24N100  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
miniBLOC, SOT-227 B  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10 V; ID = 0.5 • ID25, Note 2  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
15  
22  
S
Ciss  
Coss  
Crss  
7000  
750  
pF  
pF  
pF  
260  
td(on)  
tr  
td(off)  
tf  
35  
35  
75  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
RG = 1 Ω (External),  
aáãK  
jáääáãÉíÉê  
fåÅÜÉë  
jáåK  
j~ñK  
jáåK  
j~ñK  
^
_
PNKRM  
TKUM  
PNKUU  
UKOM  
NKOQM  
MKPMT  
NKORR  
MKPOP  
Qg(on)  
Qgs  
250  
55  
nC  
nC  
nC  
`
a
QKMV  
QKMV  
QKOV  
QKOV  
MKNSN  
MKNSN  
MKNSV  
MKNSV  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
c
QKMV  
QKOV  
MKNSN  
MKRUT  
MKNSV  
MKRVR  
Qgd  
135  
NQKVN  
NRKNN  
dPMKNO  
PMKPM  
NKNUS  
NKNVP  
RthJC  
RthCK  
0.21  
K/W  
K/W  
e
PUKMM  
PUKOP  
NKQVS  
NKRMR  
g
NNKSU  
UKVO  
NOKOO  
VKSM  
MKQSM  
MKPRN  
MKQUN  
MKPTU  
0.05  
h
i
MKTS  
MKUQ  
MKMPM  
MKQVS  
MKMPP  
MKRMS  
j
NOKSM  
NOKUR  
k
l
ORKNR  
NKVU  
ORKQO  
OKNP  
MKVVM  
MKMTU  
NKMMN  
MKMUQ  
m
QKVR  
RKVT  
MKNVR  
NKMQR  
MKOPR  
NKMRV  
n
OSKRQ  
OSKVM  
o
p
PKVQ  
QKTO  
QKQO  
QKUR  
MKNRR  
MKNUS  
MKNTQ  
MKNVN  
Source-DrainDiode  
(TJ = 25°C, unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
q
OQKRV  
JMKMR  
ORKMT  
MKN  
MKVSU  
MKVUT  
MKMMQ  
r
JMKMMO  
Symbol  
TestConditions  
IS  
VGS = 0  
=24N100  
23N100  
24  
23  
A
A
ISM  
Repetitive;  
pulse width limited by TJM  
24N100  
OPkNMM  
96  
92  
A
A
VSD  
IF = IS, VGS = 0 V,  
1.5  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
QRM  
IRM  
250  
n s  
µC  
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
1.0  
8
kçíÉëW=NK=mìäëÉ=ïáÇíÜ=äáãáíÉÇ=Äó=q  
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %K  
gjK  
IXYS reserves the right to change limits, test conditions, and dimensions.  
fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIUUNINMS  
QIURMIMTO QIVPNIUQQ  
RIMNTIRMU  
RIMPQITVS  
RIMQVIVSN RINUTINNT RIQUSITNR  
RIMSPIPMT RIOPTIQUN RIPUNIMOR  
IXFN 23N100  
IXFN 24N100  
50  
40  
30  
20  
10  
0
20  
15  
10  
5
T
= 25°C  
V
= 10V  
J
GS  
T
= 25°C  
V
= 8-10V  
GS  
7V  
7V  
J
9V  
8V  
6V  
6V  
5V  
5V  
0
0
5
10  
15  
20  
25  
0
2
4
6
8
10  
VCE - Volts  
VDS - Volts  
Figure 1. Output Characteristics at 25OC  
Figure 2. Extended Output Characteristics at 125OC  
20  
20  
16  
12  
8
V
= 10V  
7V  
GS  
T
= 125°C  
J
9V  
8V  
6V  
15  
TJ = 125OC  
10  
TJ = 25OC  
5
4
5V  
0
0
3
4
5
6
7
8
0
4
8
12  
VDS - Volts  
16  
20  
VGS - Volts  
Figure4. AdmittanceCurves  
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
I
= 24A  
D
I
= 12A  
D
25  
50  
75  
100  
125  
150  
TJ - Degrees C  
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. TJ  
«=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ  
IXFN 23N100  
IXFN 24N100  
20000  
10000  
15  
12  
9
Ciss  
V
= 500 V  
= 12 A  
DS  
I
D
I
= 10 mA  
G
f = 1MHz  
Coss  
Crss  
1000  
100  
6
3
0
0
5
10 15 20 25 30 35 40  
0
50 100 150 200 250 300 350  
VDS - Volts  
Gate Charge - nC  
Figure7.CapacitanceCurves  
Figure6. GateCharge  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
o
T = 125 C  
J
o
T = 25 C  
J
0
0.0  
0.5  
1.0  
VSD - Volts  
Figure 8. Forward Voltage Drop of the Intrinsic Diode  
1.5  
2.0  
2.5  
-50 -25  
0
25  
Case Temperature - oC  
Figure9.DrainCurrentvs.CaseTemperature  
50  
75 100 125 150  
0.300  
0.100  
0.010  
0.001  
10-4  
10-3  
10-2  
10-1  
100  
101  
Figure10.TransientThermalResistance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIUUNINMS  
QIURMIMTO QIVPNIUQQ  
RIMNTIRMU  
RIMPQITVS  
RIMQVIVSN RINUTINNT RIQUSITNR  
RIMSPIPMT RIOPTIQUN RIPUNIMOR  
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