PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 150 V
ID25 = 150 A
RDS(on) ≤ 11 mΩ
≤ 200 ns
IXFN 180N15P
trr
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
150
V
V
S
G
VDSS
VGSM
Continuous
Transient
20
30
V
V
ID25
TC =25° C
150
100
380
A
A
A
S
ID(RMS)
IDM
External lead current limit
TC = 25° C, pulse width limited by TJM
D
G = Gate
S = Source
D = Drain
IAR
TC =25° C
60
A
EAR
EAS
TC =25° C
TC =25° C
100
4
mJ
J
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
TC =25° C
680
W
Features
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
• International standard package
• Encapsulating epoxy meets
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
Md
Mounting torque
Terminal connection torque (M4)
50/60 Hz
IISOL ≤1 mA
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
VISOL
t = 1 min
t = 1 s
V~
V~
l
Fast recovery diode
Unclamped Inductive Switching (UIS)
l
TL
1.6 mm (0.062 in.) from case for 10 s
300
30
°C
rated
l
Weight
g
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
Advantages
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
VDS = VDSS, VGS = 0 V
150
V
V
l
Easy to mount
Space savings
High power density
l
2.5
5.0
l
100
nA
IDSS
25
500
µA
µA
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 90 A
11 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99241E(01/06)
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