HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 130N30
VDSS = 300 V
ID25 = 130 A
RDS(on) = 22 mΩ
D
trr
< 250 ns
N-ChannelEnhancementMode
G
S
AvalancheRated, Highdv/dt, Lowtrr
S
miniBLOC,SOT-227B(IXFN)
E153432
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
300
300
V
V
S
TJ = 25°C to 150°C; RGS = 1 MΩ
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
TC = 25°C
130
100
A
A
D
IL(RMS)
Terminal (current limit)
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
520
100
A
G = Gate
D = Drain
A
S = Source
EAR
TC = 25°C
TC = 25°C
85
4
mJ
J
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
Features
PD
TC = 25°C
700
W
• Internationalstandardpackages
• miniBLOC, withAluminiumnitride
isolation
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
VISOL
50/60 Hz, RMS
ISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
I
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
• Lowpackageinductance
• FastintrinsicRectifier
Weight
30
g
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
300
2
V
V
VGH(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 µA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
2
mA
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
22 mΩ
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98531F(01/03)
