IXFR 44N80P
Symbol
gfs
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
VDS= 20 V; ID = IT, Note 1
27
43
S
Ciss
Coss
Crss
12
910
30
nF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
28
22
75
27
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 44 A
RG = 1 Ω (External)
Qg(on)
Qgs
200
67
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
65
RthJC
RthCS
0.42 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min. Typ.
Max.
VGS = 0 V
44
A
A
V
ISM
Repetitive
100
1.5
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 22 A, -di/dt = 100 A/μs
250 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.8
8.0
μC
A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ±≤ 2 %;
2. Test current IT = 22 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
7,005,734 B2
