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IXFR44N50P

型号：

IXFR44N50P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS247[ PolarHV HiPerFET Power MOSFET ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

152 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
ISOPLUS247TM  
IXFR 44N50P  
VDSS = 500  
ID25 = 24  
RDS(on) ≤ 150 mΩ  
trr ≤ 200 ns  
V
A
(Electrically Isolated Back Surface)  
N-Channel Enhancement  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS247 (IXFR)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
500  
500  
V
V
VGSM  
VGSM  
Transient  
Continuous  
40  
30  
V
V
G
D
TAB  
S
ID25  
IDM  
TC =25° C  
TC = 25° C, pulse width limited by TJM  
24  
132  
A
A
G = Gate  
D = Drain  
S = Source  
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
44  
55  
1.7  
A
mJ  
J
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 10 Ω  
,
10  
V/ns  
Features  
l
International standard isolated  
package  
UL recognized package  
TC =25° C  
208  
W
l
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
l
l
l
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting Force  
2500  
20..120 / 4.5..25  
5
V~  
N/lb  
g
Weight  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
l
Easy to mount  
Space savings  
High power density  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 VDC, VDS = 0  
500  
V
V
2.5  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
500  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 22 A  
150 mΩ  
DS99319E(03/06)  
© 2006 IXYS All rights reserved  
IXFR 44N50P  
ISOPLUS247 Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 22 A, Note 1  
32  
S
Ciss  
Coss  
Crss  
5440  
639  
40  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
25  
27  
70  
18  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 22 A  
RG = 3 Ω (External)  
Qg(on)  
Qgs  
98  
35  
30  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 22 A  
Qgd  
RthJC  
RthCS  
0.6 ° C/W  
° C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
Repetitive  
30  
A
A
V
ISM  
132  
VSD  
trr  
IF = IS, VGS = 0 V, Note 1  
IF = 22 A,  
1.5  
200  
ns  
QRM  
IRM  
-di/dt = 100 A/µs  
VR = 100V  
0.6  
6.0  
µC  
A
Notes: 1. Pulse test, t ≤300 ms, duty cycle d ≤2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1 6,534,343  
6,306,728 B1 6,583,505  
6,404,065 B1 6,683,344  
6,727,585  
one or moreof the following U.S. patents:  
6,710,405B2 6,759,692  
6,710,463  
6,771,478 B2  
IXFR 44N50P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
7V  
GS  
V
= 10V  
GS  
8V  
7V  
6V  
6V  
5V  
5V  
0
0
1
2
3
4
5
6
7
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
5V  
I
= 44A  
D
I
= 22A  
1.6  
1.2  
0.8  
0.4  
D
0
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Fig. 5. RDS(on) Normalized to ID = 22A Value  
vs. Drain Current  
Case Temperature  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
27  
24  
21  
18  
15  
12  
9
V
= 10V  
GS  
T
J
= 125ºC  
6
T
J
= 25ºC  
3
0
-50
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
-25  
0
25  
50  
75  
100  
125  
T
- Degrees Centigrade  
ID - Amperes  
C
© 2006 IXYS All rights reserved  
IXFR 44N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
140  
120  
100  
80  
V
= 250V  
DS  
9
8
7
6
5
4
3
2
1
0
I
I
= 22A  
D
G
= 10mA  
T
= 125ºC  
J
60  
T
J
= 25ºC  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1,000  
100  
10  
T
T
= 150ºC  
= 25ºC  
J
C
iss  
C
R
Limit  
DS(on)  
25µs  
100µs  
1ms  
C
oss  
10ms  
C
rss  
f = 1 MHz  
5
DC  
10  
1
0
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
VDS - Volts  
IXFR 44N50P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
IXYSREF: T_44N50P(8J)03-21-06-B.XLS  
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