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IXFR40N50Q2

型号：

IXFR40N50Q2

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

563 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
IXFR40N50Q2  
VDSS  
ID25  
= 500 V  
=
29 A  
RDS(on) = 0.17 Ω  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg  
Low Rg, High dv/dt, Low trr  
trr ≤ 250 ns  
PreliminaryDataSheet  
ISOPLUS247(IXFR)  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
G
ID25  
IDM  
IAR  
T
= 25°C  
29  
160  
40  
A
A
A
TC = 25°C, pulse width limited by TJM  
D
S
TCC = 25°C  
G = Gate  
S = Source  
D = Drain  
TAB = Isolated  
EAR  
EAS  
T
= 25°C  
50  
2.5  
mJ  
J
TCC = 25°C  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
20  
V/ns  
Features  
z
Double metal process for low gate  
resistance  
International standard packages  
Epoxy meet UL 94 V-0, flammability  
classification  
Low RDS (on), low Qg  
Avalanche energy and current rated  
Fast intrinsic rectifier  
PD  
TC = 25°C  
320  
W
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
z
z
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting force  
300  
°C  
FC  
22...130/5...30 N/lb.  
Applications  
Weight  
5
g
z
DC-DC converters  
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
DC choppers  
Pulse generation  
Laser drivers  
z
z
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Advantages  
min. typ. max.  
z
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
500  
2.5  
V
V
Easy to mount  
Space savings  
High power density  
z
VGS(th)  
5.0  
z
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
200 nA  
VDS = V  
T = 25°C  
25 µA  
VGS = 0DVSS  
TJJ = 125°C  
1
mA  
RDS(on)  
V
= 10 V, ID = I  
0.17  
Ω
PGuSlse test, t ≤ 30T0 µs, duty cycle d ≤ 2 %  
© 2004 IXYS All rights reserved  
DS99075B(05/04)  
IXFR40N50Q2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247 Outline  
VDS = 10 V; ID = IT, pulse test  
15  
28  
S
Ciss  
Coss  
Crss  
4200  
680  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
170  
td(on)  
tr  
td(off)  
tf  
17  
13  
42  
8
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
RG = 2 Ω (External),  
Qg(on)  
Qgs  
110  
25  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
Qgd  
50  
RthJC  
RthCK  
0.39 K/W  
0.15  
K/W  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
min.  
typ. max.  
VGS = 0 V  
40  
A
A
ISM  
Repetitive; pulse width limited by TJM  
160  
1.5  
VSD  
IF = IS, VGS = 0 V,  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
250  
ns  
µC  
A
QRM  
IRM  
1
9
IF = 25A -di/dt = 100 A/µs, VR = 100 V  
Note: Test current IT = 20A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXFR40N50Q2  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
º
º
@ 25 C  
@ 25 C  
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
8V  
7V  
V
GS  
= 10V  
8V  
GS  
6V  
7V  
6V  
5.5V  
5V  
4.5V  
5V  
0
0
0
0
1
2
3
4
5
6
7
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
40  
35  
30  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
GS  
= 10V  
8V  
V
= 10V  
GS  
6V  
7V  
5.5V  
I
= 40A  
D
5V  
I
= 20A  
D
4.5V  
0.7  
0.4  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0.7  
0
10 20 30 40 50 60 70 80 90 100  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXFR40N50Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
0
0
3
0.4  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
1.2  
40  
0
5
10 15 20 25 30 35 40 45 50 55  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
DS  
= 250V  
I
I
= 20A  
D
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10 20 30 40 50 60 70 80 90 100 110  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10000  
1000  
100  
T
T
= 150ºC  
= 25ºC  
f = 1MHz  
J
C
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
oss  
10ms  
DC  
C
rss  
1
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXFR40N50Q2  
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce  
1. 00  
0. 10  
0. 01  
0. 00  
0.1  
1
10  
10 0  
1 000  
1000 0  
Puls e W idth - millis ec onds  
© 2004 IXYS All rights reserved  
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