HiPerFETTM Power MOSFETs
ISOPLUS247TM Q-CLASS
IXFR 26N60Q
VDSS = 600 V
ID25 = 23 A
(Electrically Isolated Back Surface)
RDS(on) = 250 mW
N-Channel Enhancement Mode
Avalance Rated, High dV/dt
Low Gate Charge and Capacitances
trr £ 250 ns
ISOPLUS 247TM
E153432
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
600
600
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
23
92
26
A
A
A
G = Gate
S = Source
D = Drain
*Patentpending
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TC = 25°C
310
W
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electricalisolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
TL
1.6 mm (0.063 in.) from case for 10 s
250
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 min
- faster switching
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Switching (UIS)
• Fast intrinsic Rectifier
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC & DC motor control
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250mA
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
600
2.5
V
4.5 V
±100nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 mA
1 mA
Advantages
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
250 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98727(06/09/00)
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