HiPerFETTM Power MOSFETs
ISOPLUS247TM
IXFR 21N100Q VDSS = 1000 V
ID25 = 19 A
(Electrically Isolated Back Surface)
RDS(on) = 0.50 W
trr £ 250 ns
N-Channel Enhancement Mode, Low Qg,
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
ISOPLUS 247TM
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
Isolated backside*
D = Drain
ID25
ID(RMS)
IDM
TC = 25°C (MOSFET chip capability)
Externallead(currentlimit)
TC = 25°C, Note 1
19
84
21
21
A
A
A
A
G = Gate
S = Source
IAR
TC = 25°C
*Patentpending
EAR
EAS
TC = 25°C
TC = 25°C
60
2.3
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
• SiliconchiponDirect-Copper-Bond
substrate
PD
TC = 25°C
400
W
- High power dissipation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
- Isolated mounting surface
- 2500V electricalisolation
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 min
- faster switching
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Switching (UIS)
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
1000
2.5
V
4.5 V
±100nA
IDSS
VDS = VDSS
VGS = 0 V
100 mA
2 mA
Advantages
TJ = 125°C
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
0.5
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98723(05/24/00)
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