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IXGA4N100

型号:

IXGA4N100

描述:

先进的技术信息[ ADVANCED TECHNICAL INFORMATION ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

107 K

Advanced Technical Information  
IXGA 4N100  
IXGP 4N100  
VCES = 1000 V  
IC25 8 A  
VCE(sat) = 2.7 V  
IGBT  
=
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TO-220AB(IXGP)  
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
8
4
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
16  
TO-263AA(IXGA)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 120 W  
ICM = 8  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
G
E
C (TAB)  
PC  
TC = 25°C  
40  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
•International standard packages  
JEDEC TO-220AB and TO-263AA  
•High current handling capability  
•MOS Gate turn-on  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Weight  
TO-220  
TO-263  
4
2
g
g
- drive simplicity  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
• Uninterruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 100 mA, VCE = VGE  
1000  
2.5  
V
V
5.0  
• Capacitor discharge  
ICES  
VCE= 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
mA  
mA  
250  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• Easy to mount with one screw  
• Reduces assembly time and cost  
• High power density  
VCE(sat)  
IC = ICE90, VGE = 15V  
2.2  
2.7  
© 2000 IXYS All rights reserved  
98735 (7/00)  
IXGA 4N100  
IXGP 4N100  
TO-220 AB Dimensions  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
gfs  
IC = IC90; VCE = 10 V,  
2.5  
4
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
343  
21  
pF  
Coes  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
pF  
pF  
Cres  
5
IC(ON)  
VGE = 10V, VCE = 10V  
21  
A
Qg  
13.6  
2.5  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
6.5  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
4 - Collector  
Bottom Side  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
20  
ns  
ns  
ns  
ns  
mJ  
IC = IC90, VGE = 15 V  
25  
VCE = 800 V, RG = Roff = 120 W  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
390 800  
340 700  
,
,
Eoff  
0.9  
2.0  
td(on)  
tri  
20  
25  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
Eon  
td(off)  
tfi  
0.16  
700  
520  
2.0  
mJ  
ns  
VCE = 800 V, RG = Roff = 120 W  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
ns  
Eoff  
mJ  
RthJC  
RthCK  
3.1 K/W  
K/W  
TO-263AAOutline  
TO-220  
0.5  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
BottomSide  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
Min.RecommendedFootprint  
(Dimensions in inches and mm)  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018.029  
.045  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78.050  
0.380  
.575  
.090  
.040  
.070  
.015  
.018.029  
.625  
.110  
.055  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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