IXGP 16N60C2 IXGA 16N60C2D1
IXGA 16N60C2 IXGA 16N60C2D1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 Outline
IC = 12A; VCE = 10 V,
Note 2.
8
12
S
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz
720
pF
Coes
16N60C2
55
65
pF
pF
16N60C2D1
Cres
19
pF
Qg
Qge
Qgc
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
32
6
10
nC
nC
nC
td(on)
tri
td(off)
tfi
25
15
60
35
60
ns
ns
120 ns
ns
Inductive load, TJ = 25°C
IC = 12 A; VGE = 15 V
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
V
CE = 400 V; RG = Roff = 22 Ω
Note 1.
Eoff
100 µJ
td(on)
tri
Eon
td(off)
tfi
25
18
ns
ns
mJ
ns
ns
µJ
Inductive load, TJ = 125°C
IC = 12A; VGE = 15 V
16N60C2D1 0.38
VCE = 400 V; RG = Roff = 22 Ω
120
70
150
Note 1
Eoff
RthJC
RthCK
0.83 K/W
K/W
(IXGP)
0.5
TO-263 Outline
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 10 A, VGE = 0 V
2.66
1.66
V
TJ = 125 °C
IRM
trr
IF = 12 A; -di /dt = 100 A/µs, VR = 100 V
VGE = 0 V; TJF= 125 °C
2.5
A
110
ns
trr
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
30
ns
RthJC
2.5 K/W
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ,
or increased R .
b
0.51
1.14
0.46
1.14
0.99
1.40
0.74
1.40
.020
.045
.018
.045
.039
.055
.029
.055
b2
2. Pulse test, t ≤ 300Gµs, duty cycle d ≤ 2 %
c
c2
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
=
