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IXGE200N60B

型号:

IXGE200N60B

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

67 K

Advance Technical Information  
IXGE 200N60B  
V
= 600 V  
= 175 A  
= 2.1 V  
HiPerFASTTM IGBT  
CES  
I
C25  
V
CE(sat)  
E
ISOPLUS227TM (IXGE)  
E Q  
Symbol  
TestConditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E Q  
C
IC25  
IC90  
ICM  
TC = 25°C  
175  
112  
400  
A
A
A
G = Gate, E = Emitter, C = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
Q
either emitter terminal can be  
used as Main or Kelvin Emitter  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 2.4 Ω  
Clamped inductive load, L = 30 µH  
ICM = 200  
@ 0.8 VCES  
A
Features  
PC  
TC = 25°C  
500  
W
Conforms to SOT-227B outline  
Isolation voltage 3000 V~  
Very high current, fast switching IGBT  
TJ  
-40 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-40 ... +150  
Low VCE(sat)  
VISOL  
50/60 Hz  
ISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
- for minimum on-state conduction  
losses  
I
MOS Gate turn-on  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
- drive simplicity  
Low collector-to-case capacitance  
(< 50 pF)  
Weight  
19  
g
Low package inductance (< 5 nH)  
- easy to drive and to protect  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
AC motor speed control  
DC servo and robot drives  
DC choppers  
min. typ. max.  
BVCES  
VGE(th)  
IC = 1 mA , VGE = 0 V  
IC = 1 mA, VCE = VGE  
600  
2.5  
V
V
Uninterruptible power supplies (UPS)  
5.5  
Switch-mode and resonant-mode  
power supplies  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
2
µA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±400  
nA  
V
Easy to mount with 2 screws  
Space savings  
VCE(sat)  
IC = 120A, VGE = 15 V  
2.1  
High power density  
98911 (2/02)  
© 2002 IXYS All rights reserved  
IXGE 200N60B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
SOT-227BminiBLOC  
min. typ.  
max.  
IC = 60 A; VCE = 10 V,  
50  
75  
S
Pulse test, t 300 µs, duty cycle 2 %  
Cies  
Coes  
Cres  
11000  
680  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
190  
Qg  
350  
72  
nC  
nC  
nC  
Qge  
Qgc  
IC = 120A, VGE = 15 V, VCE = 0.5 VCES  
131  
td(on)  
tri  
60  
45  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15 V  
Eon  
td(off)  
2.4  
200  
160  
5.5  
mJ  
VCE = 0.8 VCES, RG = Roff = 2.4 Ω  
360 ns  
280 ns  
9.6 mJ  
Remarks: Switching times  
may increase for  
VCE (Clamp) > 0.8 • VCES  
,
tri  
higher TJ or increased RG  
Eoff  
td(on)  
tri  
60  
60  
ns  
ns  
Inductive load, TJ = 125°C  
IC =100A, VGE = 15 V  
Eon  
td(off)  
tri  
4.8  
290  
250  
8.7  
mJ  
ns  
VCE = 0.8 VCES, RG = Roff = 2.4 Ω  
Remarks: Switching times  
may increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
,
Eoff  
mJ  
RthJC  
RthCK  
0.25 K/W  
K/W  
0.07  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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