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IXGR50N60B

型号：

IXGR50N60B

描述：

HiPerFAST IGBT ISOPLUS247[ HiPerFAST IGBT ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

566 K

下载PDF手册
HiPerFASTTM IGBT  
ISOPLUS247TM  
VCES = 600 V  
IC25 = 75 A  
VCE(sat) = 2.5 V  
tfi(typ) = 85 ns  
IXGR 50N60B  
IXGR 50N60BD1  
(Electrically Isolated Back Surface)  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
Isolated Backside*  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
75  
45  
200  
A
A
A
G = Gate,  
E=Emitter  
C = Collector  
SSOA  
V
= 15 V, T = 125°C, RG = 10 Ω  
I
= 100  
A
(RBSOA)  
CGlaE mped indVuJctive load, L = 100 µH  
TC = 25°C  
@C0M.8 VCES  
250  
* Patent pending  
PC  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
z
z
z
z
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
VISOL  
50/60 Hz, RMS, t = 1minute leads-to-tab  
2500  
5
V
g
- drive simplicity  
Weight  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
z
Uninterruptible power supplies (UPS)  
z
Switched-mode and resonant-mode  
power supplies  
VGE(th)  
ICES  
I
= 250 µA, VCE = VGE  
50N60B  
2.5  
5.0  
5.0  
V
V
ICC = 500 µA  
50N60BD1 2.5  
z
AC motor speed control  
z
DC servo and robot drives  
VCE = 600V  
VGE = 0 V  
50N60B  
200 µA  
650 µA  
z
DC choppers  
50N60BD1  
50N60B  
TJ = 125°C  
1
5
mA  
mA  
50N60BD1  
Advantages  
z
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
2.5  
Easy assembly  
High power density  
Very fast switching speeds for high  
frequency applications  
z
VCE(sat)  
IC = IT, VGE = 15 V  
V
z
© 2004 IXYS All rights reserved  
DS98730C(06/04)  
IXGR 50N60B  
IXGR 50N60BD1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
gfs  
IC = I ; V = 10 V,  
25  
35  
S
PulseTtesCt,E t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
4100  
pF  
pF  
pF  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
300  
50  
pF  
Qg  
110  
30  
nC  
nC  
nC  
Qge  
Qgc  
IC = IT, VGE = 15 V, VCE = 0.5 VCES  
35  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
td(on)  
tri  
td(off)  
tfi  
50  
50  
ns  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
4 no connection  
IC = I , V = 15 V, L = 100uH  
VCE =T0.8G•EVCES, RG = Roff = 2.7 Ω  
Dim.  
Millimeter  
Inches  
110 270  
85 150  
Min.  
Max. Min. Max.  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
A
4.83  
2.29  
1.91  
1.14  
1.91  
2.92  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
A
,
A12  
Eoff  
3.0  
4.0  
mJ  
b
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
b12  
Inductive load, TJ = 125°C  
td(on)  
tri  
50  
60  
ns  
ns  
mJ  
ns  
ns  
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
IC = IT, VGE = 15 V, L = 100uH  
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω  
20.80 21.34  
15.75 16.13  
Eon  
td(off)  
tfi  
3
e
5.45 BSC  
.215 BSC  
.780 .800  
.150 .170  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
200  
250  
L
19.81 20.32  
,
L1  
3.81  
4.32  
Q
5.59  
6.20  
.220 .244  
R
4.32  
4.83  
.170 .190  
Eoff  
4.2  
mJ  
RthJC  
RthCK  
0.5 K/W  
K/W  
0.15  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
IF = I , VGE = 0 V,  
T = 150°C  
1.6  
2.5  
V
V
PulseTtest, t ≤ 300 ms, duty cycJle ≤ 2 %  
IRM  
IF = IT, V = 0 V, -diF/dt = 100 A/ms,TJ = 100°C 3.2  
A
ns  
ns  
VR = 100 GVE  
trr  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
35  
RthJC  
0.85 K/W  
Note: IT,= 50A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
IXGR 50N60B  
IXGR 50N60BD1  
100  
80  
60  
40  
20  
0
200  
160  
120  
80  
V
GE = 15V  
TJ = 25°C  
TJ = 25°C  
11V  
9V  
VGE = 15V  
13V  
11V  
9V  
13V  
7V  
5V  
7V  
5V  
40  
0
0
1
2
3
4
5
0
2
4
6
8
10  
VCE - Volts  
Fig. 1. Saturation Voltage Characteristics  
VCE - Volts  
Fig. 2. Extended Output Characteristics  
100  
80  
60  
40  
20  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
TJ = 125°C  
VGE = 15V  
VGE = 15V  
9V  
I
C = 100A  
13V  
11V  
7V  
5V  
IC = 50A  
IC = 25A  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Fig. 3. Saturation Voltage Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
10000  
1000  
100  
100  
80  
60  
40  
20  
0
f = 1Mhz  
V
CE = 10V  
C
iss  
C
C
oss  
rss  
TJ = 25°C  
TJ = 125°C  
10  
0
5
10 15 20 25 30 35 40  
0
2
4
6
8
10  
VGE - Volts  
VCE-Volts  
Fig. 6. JunctionCapacitanceCurves  
Fig. 5. Saturation Voltage Characteristics  
© 2004 IXYS All rights reserved  
IXGR 50N60B  
IXGR 50N60BD1  
12  
10  
8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
TJ = 125°C  
TJ = 125°C  
E(ON)  
RG = 4.7Ω  
10  
E(ON)  
IC = 100A  
E(OFF)  
8
6
4
2
0
E(OFF)  
6
IC = 50A  
IC =25A  
E(ON)  
4
E(OFF)  
E(OFF)  
E(ON)  
2
0
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
RG - Ohms  
IC - Amperes  
Fig. 7. Dependence of EON and EOFF on IC.  
Fig. 8. Dependence of tfi and EOFF on RG.  
600  
20  
15  
10  
5
IC =50A  
CE = 250V  
V
100  
10  
1
TJ = 125°C  
RG = 5.2 Ω  
dV/dt < 5V/ns  
0.1  
0
0
100  
200  
300  
400  
500  
0
50  
100  
150  
200  
250  
300  
VCE - Volts  
Qg - nanocoulombs  
Fig.10.Turn-offSafeOperatingArea  
Fig. 9. Gate Charge  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Figure11. IGBTTransientThermalResistance  
IXGR 50N60B  
IXGR 50N60BD1  
160  
A
140  
4000  
nC  
80  
T =100°C  
VVRJ= 300V  
T =100°C  
VVRJ= 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ=25°C  
TVJ=100°C  
I =120A  
IF= 60A  
IFF= 30A  
IRM  
Qr  
I =120A  
IF= 60A  
IFF= 30A  
40  
20  
0
TVJ=150°C  
A/µs  
-diF/dt  
0
1
2
V
100  
1000  
0
200 400 600 800 1000  
A/µs  
-diF/dt  
VF  
Fig. 12 Forward current IF versus VF  
2.0  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
140  
20  
V
1.6  
µs  
T =100°C  
VVRJ = 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
tfr  
120  
110  
100  
90  
I =120A  
IF= 60A  
IFF= 30A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
Qr  
T =100°C  
IFVJ = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
diF/dt  
°C  
A/µs  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and  
tfr versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
4
0.3073  
0.3533  
0.0887  
0.1008  
0.0055  
0.0092  
0.0007  
0.0399  
0.01  
0.001  
DSEP 2x61-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2004 IXYS All rights reserved  
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