IXLF 19N250A
IC25 = 32 A
VCES = 2500 V
VCE(sat)= 3.2 V
High Voltage IGBT
in High Voltage
ISOPLUS i4-PACTM
tf
= 250 ns
5
1
2
1
2
5
Features
IGBT
• High Voltage IGBT
Symbol
VCES
Conditions
Maximum Ratings
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
-substituteforelectromechanicaltrigger
and discharge relays
TVJ = 25°C to 150°C
2500
20
V
V
VGES
IC25
IC90
TC = 25°C
TC = 90°C
32
19
A
A
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
ICM
VCEK
VGE = 15 V; RG = 47 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
70
1200
A
V
Ptot
TC = 25°C
250
W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
- industry standard outline
- UL registered E72873
VCE(sat)
IC = 19 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.2
4.7
3.9
V
V
Applications
VGE(th)
ICES
IC = 1 mA; VGE = VCE
5
8
V
• switched mode power supplies
• DC-DC converters
• resonant converters
• laser generators, x ray generators
• discharge circuits
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.15 mA
mA
0.2
IGES
VCE = 0 V; VGE
=
20 V
500 nA
td(on)
tr
td(off)
tf
Eon
Eoff
100
50
600
250
15
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 1500 V; IC = 19 A
VGE = 15 V; RG = 47 Ω
30
Cies
Coes
Cres
2.28
103
43
nF
pF
pF
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 1500V; VGE = 15 V; IC = 19 A
QGon
RthJC
142
nC
0.5 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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