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ZXTP07040DFFTA

型号:

ZXTP07040DFFTA

描述:

40V , SOT23F , PNP中功率晶体管[ 40V, SOT23F, PNP medium power transistor ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

6 页

PDF大小:

443 K

ZXTP07040DFF  
40V, SOT23F, PNP medium power transistor  
Summary;  
BV  
BV  
> -40V  
CEO  
ECO  
> -3V  
I
= -3A  
C(cont)  
V
< -100mV @ 1A  
= 67m  
CE(sat)  
CE(sat)  
R
P = 1.5W  
D
Complementary part number ZXTN07045EFF  
Description  
C
E
This low voltage PNP transistor has been designed for applications  
requiring high gain and very low saturation voltage. The SOT23F  
package is pin compatible with the industry standard SOT23 footprint  
but offers lower profile and higher dissipation for applications where  
power density is of utmost importance.  
B
Features  
Low profile SOT23F package  
Low saturation voltage  
High Gain  
E
B
High power dissipation  
C
Applications  
Load switches  
Battery charging  
Siren driver  
Pinout - top view  
MOSFET and IGBT gate driver  
Motor drive  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXTP07040DFFTA  
7
8
3000  
Device marking  
1D2  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTP07040DFF  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
V
V
V
-50  
V
CBO  
CEO  
ECO  
EBO  
Collector-emitter voltage  
-40  
-3  
V
V
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
-7  
V
(c)  
I
-3  
A
A
A
W
Continuous collector current  
C
Peak pulse current  
Base current  
(a)  
I
-6  
CM  
I
-1  
B
P
P
P
P
0.84  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
=25°C  
=25°C  
=25°C  
=25°C  
D
D
D
D
amb  
amb  
amb  
amb  
6.72  
1.34  
mW/°C  
W
(b)  
(c)  
(d)  
10.72  
1.50  
mW/°C  
W
12.0  
2.0  
mW/°C  
W
16.0  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
149  
°C/W  
Junction to ambient  
JA  
(b)  
R
93  
83  
60  
°C/W  
°C/W  
°C/W  
Junction to ambient  
JA  
(c)  
R
Junction to ambient  
JA  
(d)  
R
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTP07040DFF  
Characteristics  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTP07040DFF  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
BV  
-50  
-40  
-7  
-80  
-65  
-8.3  
-8.6  
<-1  
V
V
V
V
I = -100A  
C
CBO  
CEO  
EBO  
ECO  
(*)  
Collector-emitter breakdown BV  
voltage (base open)  
I = -10mA  
C
Emitter-base breakdown  
voltage  
BV  
I = -100A  
E
Emitter-collector breakdown BV  
voltage (reverse blocking)  
-3  
I = -100A  
E
Collector-base cut-off current I  
-50  
-20  
-50  
nA  
A  
nA  
mV  
V
V
V
= -36V  
CBO  
CB  
CB  
EB  
= -36V, T  
= 100°C  
amb  
Emitter-base cut-off current  
I
<-1  
= -5.6V  
EBO  
(*)  
Collector-emitter saturation  
voltage  
V
-110 -180  
-80 -100  
I = -0.5A, I = -5mA  
CE(sat)  
C
B
(*)  
mV  
mV  
mV  
mV  
I = -1A, I = -100mA  
C
B
(*)  
-230 -400  
-310 -540  
-250 -390  
I = -1A, I = -10mA  
C
B
(*)  
I = -2A, I = -40mA  
C
B
(*)  
(*)  
I = -3A, I = -150mA  
C
B
Base-emitter saturation  
voltage  
V
-935 -1040 mV  
I = -3A, I = -150mA  
BE(sat)  
BE(on)  
C
B
(*)  
Base-emitter turn-on voltage  
V
h
-825 -930 mV  
I = -3A, V = -2V  
C
CE  
(*)  
Static forward current  
transfer ratio  
300  
250  
200  
80  
450  
380  
330  
160  
200  
800  
I = -10mA, V = -2V  
FE  
C
CE  
(*)  
I = -0.5A, V = -2V  
C
CE  
(*)  
I = -1A, V = -2V  
C
CE  
(*)  
I = -3A, V = -2V  
C
CE  
Transition frequency  
Output capacitance  
f
100  
MHz I = -50mA, V = -5V  
T
C
CE  
f = 50MHz  
(*)  
C
30  
40  
pF  
V
V
= -10V, f = 1MHz  
obo  
CB  
CC  
Delay time  
Rise time  
t
t
t
t
20.7  
12.2  
375  
72  
ns  
ns  
ns  
ns  
= -10V,  
d
I = -500mA,  
C
r
s
f
I
= I = -50mA  
B2  
B1  
Storage time  
Fall time  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTP07040DFF  
Typical characteristics  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTP07040DFF  
Package outline - SOT23F  
c
D
e1  
e
b
b
L1  
L
E
E1  
E2  
b
A1  
R
A
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
0.80  
0.00  
0.35  
0.10  
2.80  
Max.  
Min.  
Max.  
Min.  
2.30  
1.50  
1.10  
0.48  
0.30  
0.05  
0°  
Max.  
2.50  
1.70  
1.26  
0.68  
0.50  
0.15  
12°  
Max.  
0.0984  
0.0669  
0.0496  
0.0268  
0.0161  
0.0059  
12°  
A
A1  
b
1.00  
0.10  
0.45  
0.20  
3.00  
0.0315  
0.00  
0.0394  
0.0043  
0.0161  
0.0079  
0.1181  
E
E1  
E2  
L
0.0906  
0.0590  
0.0433  
0.0189  
0.0153  
0.0019  
0°  
0.0153  
0.0043  
0.1102  
c
D
L1  
R
e
0.95 ref  
0.0374 ref  
e1  
1.80  
2.00  
0.0709  
0.0787  
O
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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