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ZXTP07012EFF

型号：

ZXTP07012EFF

描述：

12V ， SOT23F ， PNP中功率晶体管[ 12V, SOT23F, PNP medium power transistor ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

6 页

PDF大小：

442 K

下载PDF手册
ZXTP07012EFF  
12V, SOT23F, PNP medium power transistor  
Summary;  
BV  
> -12V  
CEO  
I
= -4A  
C(cont)  
V
< -75mV @ 1A  
= 50m⍀  
CE(sat)  
CE(sat)  
R
P = 1.5W  
D
Complementary part number ZXTN07012EFF  
Description  
C
E
This low voltage PNP transistor has been designed for applications  
requiring high gain and very low saturation voltage. The SOT23F  
package is pin compatible with the industry standard SOT23 footprint  
but offers lower profile and higher dissipation for applications where  
power density is of utmost importance.  
B
Features  
•
•
•
•
Low profile SOT23F package  
Low saturation voltage  
High gain  
E
B
High power dissipation  
C
Applications  
•
•
•
Load switches  
Battery charging  
Motor drive  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXTP07012EFFTA  
7
8
3000  
Device marking  
1D1  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXTP07012EFF  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
V
V
-12  
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
-12  
-7  
V
V
(c)  
I
-4  
A
A
A
W
Continuous collector current  
C
Peak pulse current  
Base current  
I
-8  
CM  
I
-1  
B
(a)  
(b)  
(c)  
(d)  
0.84  
Power dissipation at T  
Linear derating factor  
=25°C  
=25°C  
=25°C  
=25°C  
amb  
amb  
amb  
amb  
P
P
P
P
6.72  
1.34  
mW/°C  
W
D
D
D
D
Power dissipation at T  
Linear derating factor  
10.72  
1.50  
mW/°C  
W
Power dissipation at T  
Linear derating factor  
12.0  
2.0  
mW/°C  
W
Power dissipation at T  
Linear derating factor  
16.0  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
149  
°C/W  
Junction to ambient  
⍜JA  
(b)  
R
93  
83  
60  
°C/W  
°C/W  
°C/W  
Junction to ambient  
⍜JA  
(c)  
R
Junction to ambient  
⍜JA  
(d)  
R
Junction to ambient  
⍜JA  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs.  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXTP07012EFF  
Characteristics  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXTP07012EFF  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
BV  
-12  
-12  
-7  
-23  
-16  
-8.4  
<-1  
V
V
V
I = -100␮A  
C
CBO  
CEO  
EBO  
(*)  
Collector-emitter breakdown BV  
voltage (base open)  
I = -10mA  
*
C
Emitter-base breakdown  
voltage  
BV  
I = -100␮A  
E
Collector-base cut-off current I  
-50  
-20  
nA  
␮A  
nA  
mV  
V
V
V
= -10V  
CBO  
CB  
CB  
EB  
= -10V, T  
= -5.6V  
= 100°C  
amb  
Emitter-base cut-off current  
I
<-1  
-80  
-50  
EBO  
(*)  
Collector-emitter saturation  
voltage  
V
-100  
I = -0.5A, I = -2.5mA  
CE(sat)  
C
B
(*)  
-60  
-75  
mV  
mV  
mV  
mV  
I = -1A, I = -100mA  
C
B
(*)  
-130 -165  
-250 -350  
-260 -340  
I = -1A, I = -5mA  
C
B
(*)  
I = -2A, I = -10mA  
C
B
(*)  
(*)  
I = -4A, I = -80mA  
C
B
Base-emitter saturation  
voltage  
V
-945 -1050 mV  
I = -4A, I = -80mA  
BE(sat)  
C
B
(*)  
Base-emitter turn-on voltage V  
-850 -950 mV  
I = -4A, V = -2V  
BE(on)  
C
CE  
(*)  
Static forward current  
transfer ratio  
h
500  
400  
230  
150  
100  
750  
570  
320  
210  
250  
1500  
I = -10mA, V = -2V  
FE  
C
CE  
(*)  
(*)  
(*)  
I = -1A, V = -2V  
C
CE  
I = -4A, V = -2V  
C
CE  
I = -6A, V = -2V  
C
CE  
Transition frequency  
f
MHz I = -50mA, V = -5V  
T
C
CE  
f = 50MHz  
(*)  
Input capacitance  
C
C
223  
24  
pF  
pF  
V
= -0.5V, f = 1MHz  
ibo  
CB  
(*)  
Output capacitance  
30  
V
V
= -10V, f = 1MHz  
= -10V.  
obo  
CB  
CC  
Delay time  
Rise time  
t
t
t
t
12.8  
15.6  
240  
ns  
ns  
ns  
ns  
d
I = -500mA,  
C
r
s
f
I
= I = -50mA.  
B2  
B1  
Storage time  
Fall time  
92.8  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXTP07012EFF  
Typical characteristics  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXTP07012EFF  
Package outline - SOT23F  
c
D
e1  
e
b
b
L1  
L
E
E1  
E2  
b
A1  
R
A
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
0.80  
0.00  
0.35  
0.10  
2.80  
Max.  
Min.  
Max.  
Min.  
2.30  
1.50  
1.10  
0.48  
0.30  
0.05  
0°  
Max.  
2.50  
1.70  
1.26  
0.68  
0.50  
0.15  
12°  
Max.  
0.0984  
0.0669  
0.0496  
0.0268  
0.0161  
0.0059  
12°  
A
A1  
b
1.00  
0.10  
0.45  
0.20  
3.00  
0.0315  
0.00  
0.0394  
0.0043  
0.0161  
0.0079  
0.1181  
E
E1  
E2  
L
0.0906  
0.0590  
0.0433  
0.0189  
0.0153  
0.0019  
0°  
0.0153  
0.0043  
0.1102  
c
D
L1  
R
e
0.95 ref  
0.0374 ref  
e1  
1.80  
2.00  
0.0709  
0.0787  
O
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 1 - September 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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