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XU1000

型号:

XU1000

描述:

17.0-27.0 GHz的砷化镓MMIC变送器[ 17.0-27.0 GHz GaAs MMIC Transmitter ]

品牌:

MIMIX[ MIMIX BROADBAND ]

页数:

5 页

PDF大小:

264 K

17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1000  
Features  
Chip Device Layout  
Fundamental Transmitter  
Low DC Power Consumption  
Optional Power Bias Configuration  
0.0 dB Conversion Gain  
+12.0 dBm Third Order Intercept (IIP3)  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadbands 17.0-27.0 GHz GaAs MMIC  
transmitter has a small signal conversion gain of 0.0  
dB with a third order intercept of +12.0 dBm across  
the band.The device is a single fundamental mixer  
followed by a single stage amplifier.This MMIC uses  
Mimix Broadbands 0.15 µm GaAs PHEMT device  
model technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave Point-to-  
Point Radio, LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
+6.0 VDC  
50 mA  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
+10 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
dB  
dB  
dBm  
dB  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
17.0  
17.0  
15.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
7.0  
8.0  
0.0  
+12.0  
10.0  
+2.0  
+12.0  
+3.0  
-0.5  
23  
Max.  
27.0  
27.0  
29.0  
2.0  
-
-
-
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Input Return Loss LO (S11)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Isolation LO/RF  
-
-
-
1,2  
Input Power for 1 dB Compression (P1dB)  
1,2  
-
Input Third Order Intercept (IIP3)  
-
-1.0  
-
+5.5  
0.0  
46  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
(1) Optional power bias Vd=5.5V, Id=45mA will typically yield improved P1dB.  
(2) Measured using constant current.  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1000  
Mechanical Drawing  
1.613  
(0.064)  
2.212  
(0.087)  
2.500  
(0.098)  
4
3
1.961  
2
(0.077)  
1.158  
(0.046)  
5
1
0.0  
0.0  
2.660  
(0.105)  
0.391  
(0.015)  
(Note: Engineering designator is 25KTX_05N3)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.124 mg.  
Bond Pad #1 (LO)  
Bond Pad #2 (IF)  
Bond Pad #3 (Vg)  
Bond Pad #4 (Vd)  
Bond Pad #5 (RF Out)  
Bypass Capacitors - See App Note [2]  
Bias Arrangement  
Vg  
Vd  
Vg  
Vd  
3
4
IF  
2
IF  
RF  
5
RF Out  
1
LO  
LO  
Page 2 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1000  
App Note [1] Biasing - As shown in the bonding diagram, this device has a single gain stage. Nominal bias is  
Vd=3V, Id=23mA. Power bias may be as high as Vd=5.5V, Id=45mA. It is also recommended to use active  
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible  
results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit  
may be a single transistor or a low power operational amplifier, with a low value resistor in series with the  
drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current  
and thus drain voltage.The typical gate voltage needed to do this is -0.5V.Typically the gate is protected with  
Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure  
negative gate bias is available before applying the positive drain supply.  
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF)  
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.  
MTTFTables  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
77 deg Celsius  
97 deg Celsius  
117 deg Celsius  
-
2.45E+12  
1.39E+11  
1.05E+10  
4.07E-04  
7.21E-03  
9.51E-02  
319.5° C/W  
-
Bias Conditions: Vd=3.0V, Id=23 mA  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
133 deg Celsius  
153 deg Celsius  
173 deg Celsius  
-
2.76E+09  
3.32E+08  
4.83E+07  
3.62E-01  
3.01E+00  
2.07E+01  
306.7° C/W  
-
Bias Conditions: Vd=5.5V, Id=46 mA  
Page 3 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1000  
Typical Application  
XU1000  
XB1004  
XP1013  
Sideband  
Reject  
RF Out  
17.7-19.7 GHz  
IF IN  
2 GHz  
LO(+12dBm)  
15.7-17.7 GHz (USB Operation)  
19.7-21.7 GHz (LSB Operation)  
Mimix Broadband MMIC-based 17.0-27.0 GHz Transmitter Block Diagram  
(Changing LO and IF frequencies as required allows design to operate as high as 27 GHz)  
Also See: Multiplier selection guide at www.mimixbroadband.com for multipliers that can be used  
to drive the XU1000.  
Page 4 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1000  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the  
human body and the environment. For safety, observe the following procedures:  
Do not ingest.  
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical  
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
Observe government laws and company regulations when discarding this product.This product must be  
discarded in accordance with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support  
devices or systems without the express written approval of the President and General Counsel of Mimix  
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for  
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a  
significant injury to the user. (2) A critical component is any component of a life support device or system whose  
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied  
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-  
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,  
sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the  
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as  
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are  
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy  
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total  
2
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001  
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated  
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere  
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold  
+
Germanium should be avoided).The work station temperature should be 310 C 10 C. Exposure to these  
-
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid  
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to  
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x  
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm  
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be  
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing  
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.  
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short  
as possible.  
Page 5 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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