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QSZ2

型号:

QSZ2

描述:

通用晶体管[ General purpose transistor ]

品牌:

ROHM[ ROHM ]

页数:

5 页

PDF大小:

91 K

QSZ2  
Transistors  
General purpose transistor  
QSZ2  
A 2SB1695 and a 2SD2657 are housed independently in a TSMT5 package.  
zExternal dimensions (Unit : mm)  
zApplications  
DC / DC converter  
Motor driver  
QSZ2  
2.8  
1.6  
zFeatures  
1) Low VCE(sat)  
2) Small package  
0.30.6  
ROHM : TSMT5  
Each lead has same dimensions  
zStructure  
Silicon epitaxial planar transistor  
Abbreviated symbol : Z02  
zEquivalent circuit  
(5)  
(4)  
Tr1  
Tr2  
(1)  
(2)  
(3)  
zPackaging specifications  
Type  
Package  
QSZ2  
TSMT5  
Z02  
Marking  
Code  
TR  
Basic ordering unit(pieces)  
3000  
1/4  
QSZ2  
Transistors  
zAbsolute maximum ratings (Ta=25°C)  
Tr1  
Parameter  
Symbol  
Limits  
30  
30  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
V
V
6  
V
I
C
1.5  
3  
A
A
Collector current  
I
CP  
1
2
3
3
500  
mW/Total  
W/Total  
W/Element  
°C  
Collector power dissipation  
P
C
1.25  
0.9  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
1
Single pulse Pw=1ms.  
2
3
Each terminal mounted on a recommended land.  
Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate.  
Tr2  
Parameter  
Symbol  
Limits  
30  
30  
6
1.5  
3
Unit  
V
V
V
A
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
I
C
Collector current  
1
2
I
CP  
A
500  
1.25  
0.9  
150  
mW/Total  
W/Total  
3
3
Power dissipation  
PC  
W/Element∗  
Junction temperature  
Tj  
°C  
°C  
Range of storage temperature  
Tstg  
55 to +150  
1
2
3
Single pulse Pw=1ms.  
Each terminal mounted on a recommended land.  
Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate.  
zElectrical characteristics (Ta=25°C)  
Tr1  
Parameter  
Symbol  
Typ.  
Max.  
Unit  
V
Conditions  
Min.  
30  
30  
6  
270  
Collector-base breakdown voltage  
Collector-emitter breakdown viltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
I
I
I
C
=10µA  
=1mA  
V
C
V
E
=10µA  
CB=30V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
nA  
nA  
mV  
MHz  
pF  
V
V
Emitter cutoff current  
I
Collerctor-emitter saturation voltage  
DC current transfer ratio  
V
200 370  
280  
13  
I
C
=1mA, I  
CE=2V, I  
CE=2V, I  
B
=50mA  
h
680  
V
V
V
C=100mA  
Transition frequency  
f
T
E=100mA, f=100MHz  
Output capacitance  
Cob  
CB=10V, I  
E
=0mA, f=1MHz  
Pulsed  
Tr2  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
30  
30  
6
140  
300  
11  
100  
100  
350  
680  
I
I
I
C
=10µA  
=1mA  
V
C
V
E
=10µA  
CB=30V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
nA  
nA  
mV  
MHz  
pF  
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current gain  
V
I
C
=1A, I =50mA  
B
h
V
V
V
CE=2V, I  
CE=2V, I  
C
=100mA∗  
=100mA, f=100MHz∗  
=0A, f=1MHz  
Transition frequency  
f
T
E
Corrector output capacitance  
Cob  
CB=10V, I  
E
Pulsed  
2/4  
QSZ2  
Transistors  
zElectrical characteristic curves  
Tr1  
1000  
1
10  
Ta=25°C  
Pulsed  
V
CE=2V  
IC/IB=20/1  
Pulsed  
Pulsed  
Ta=100°C  
Ta=40°C  
Ta=25°C  
Ta=100°C  
Ta=25°C  
Ta=40°C  
V
BE(sat)  
1
100  
0.1  
0.1  
0.01  
Ta=100°C  
IC/IB=50/1  
V
CE(sat)  
Ta=25°C  
Ta=40°C  
IC/IB=20/1  
I
C
/I  
B=10/1  
0.01  
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.1 DC current gain  
Fig.3 Collector-emitter saturation voltage  
vs. collector current  
Fig.2 Collector-emitter saturation voltage  
base-emitter saturation voltage  
vs. collector current  
vs. collector current  
1
0.1  
1000  
1000  
Ta=25°C  
Ta=25°C  
V
CE=2V  
V
CE=5V  
V
CE=2V  
Pulsed  
tstg f=100MHz  
f=100MHz  
Ta=100°C  
Ta=25°C  
100  
tf  
Ta=40°C  
100  
tdon  
0.01  
0.001  
10  
1
tr  
10  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
0
0.5  
1
1.5  
EMITTER CURRENT : I  
E
(A)  
COLLECTOR CURRENT : IC (A)  
BASE TO EMITTER CURRENT : VBE (V)  
Fig.5 Gain bandwidth product  
vs. emitter current  
Fig.6 Switching time  
Fig.4 Grounded emitter propagation  
characteristics  
1000  
Ta  
=
25°C  
0A  
1MHz  
I
C=  
f
=
Cib  
100  
Cob  
10  
1
0.1  
1
10  
100  
EMITTER TO BASE VOLTAGE : VEB V)  
(
COLLECTOR TO BASE VOLTAGE : VCB V)  
(
Fig.7 Collector output capacitance  
vs. collector-base voltage  
Emitter input capacitance  
vs. emitter-base voltage  
3/4  
QSZ2  
Transistors  
Tr2  
1000  
1
10  
1
V
CE=2V  
Ta=25°C  
Pulsed  
Ta=100°C  
Ta=25°C  
Ta=40°C  
Pulsed  
Ta=40°C  
Ta=25°C  
Ta=100°C  
VBE(sat)  
0.1  
100  
0.1  
I
C/I  
B
=50/1  
I
C/IB=10/1  
Ta=100°C  
Ta=25°C  
IC/IB  
=20/1  
VCE(sat)  
0.01  
0.001  
Ta=40°C  
I
C B=20/1  
/I  
Pulsed  
0.01  
0.001  
10  
0.001  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C (A)  
COLLECTOR CURRENT : IC (A)  
Fig.9 Collector-emitter saturation voltage  
base-emitter saturation voltage  
vs. collector current  
Fig.8 DC current gain  
Fig.10 Collector-emitter saturation voltage  
vs. collector current  
vs. collector current  
1
0.1  
1000  
1000  
Ta=25°C  
Ta=25°C  
V
CE=2V  
V
CE=5V  
V
CE=2V  
Pulsed  
I
C/IB=20/1  
f=100MHz  
tstg  
Ta=100°C  
Ta=25°C  
100  
tf  
Ta=40°C  
100  
tdon  
tr  
0.01  
0.001  
10  
1
10  
0.01  
0
0.5  
1
1.5  
0.01  
0.1  
1
10  
0.1  
1
10  
BASE TO EMITTER CURRENT : VBE (V)  
EMITTER CURRENT : I  
E
(A)  
COLLECTOR CURRENT : IC (A)  
Fig.12 Gain bandwidth product  
vs. emitter current  
Fig.13 Switching time  
Fig.11 Grounded emitter propagation  
characteristics  
1000  
Ta  
=
25°C  
0A  
1MHz  
I
C=  
f
=
Cib  
100  
Cob  
10  
1
0.1  
EMITTER TO BASE VOLTAGE : VEB  
COLLECTOR TO BASE VOLTAGE : VCB  
1
10  
100  
V)  
(V)  
(
Fig.14 Collector output capacitance  
vs. collector-base voltage  
Emitter input capacitance  
vs. emitter-base voltage  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
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