VUO 80
IdAVM = 82 A
VRRM = 800-1800 V
Three Phase
Rectifier Bridge
5
4
1/2
VRSM
V
VRRM
V
Type
2
1
10
8
6
900
800
VUO 80-08NO1
VUO 80-12NO1
VUO 80-14NO1
VUO 80-16NO1
VUO 80-18NO1
1300
1500
1700
1900
1200
1400
1600
1800
10
8
4/5
6
Symbol
Test Conditions
Maximum Ratings
Features
●
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E72873
IdAV
IdAVM
TK = 90°C, module
module
82
82
A
A
●
●
●
●
●
●
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
600
640
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
520
555
A
A
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1800
1720
A2s
A2s
Applications
●
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1295
A2s
A2s
●
●
Field supply for DC motors
TVJ
TVJM
Tstg
-40...+150
150
-40...+130
°C
°C
°C
Advantages
●
Easy to mount with two screws
Space and weight savings
Improved temperature and power
●
●
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
3000
3600
V~
V~
cycling
IISOL £ 1 mA
Md
Mounting torque
(M5)
(10-32UNF)
2 - 2.5
18-22
Nm
lb.in.
Dimensions in mm (1 mm = 0.0394")
Weight
typ.
35
g
Symbol
IR
Test Conditions
Characteristic Values
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
£
£
0.3 mA
6
1.5
0.8
mA
VF
IF = 80 A;
TVJ = 25°C
£
V
VT0
rT
For power-loss calculations only
V
7.5 mW
RthJH
per diode, 120° rect.
per module, 120° rect.
1.42 K/W
0.24 K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7 mm
9.4 mm
50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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