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KYZ35A05_07

型号:

KYZ35A05_07

描述:

硅压入二极管 - 高温二极管[ Silicon-Press-Fit-Diodes - High Temperature Diodes ]

品牌:

DIOTEC[ DIOTEC SEMICONDUCTOR ]

页数:

2 页

PDF大小:

69 K

KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6  
KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6  
Silicon-Press-Fit-Diodes – High Temperature Diodes  
Silizium-Einpress-Dioden – Hochtemperatur-Dioden  
Version 2006-04-22  
Nominal Current  
Nennstrom  
35 A  
Ø 16±0.5  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
50 ... 600 V  
Metal press-fit case with glass seal  
Metall-Einpressgehäuse mit Glas-Durchführung  
Weight approx. – Gewicht ca.  
10 g  
Ø 12.77±0.04  
Compound has classification UL94V-0  
Vergussmasse nach UL94V-0 klassifiziert  
Standard packaging: bulk  
Standard Lieferform: lose im Karton  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Type / Typ  
Wire to / Draht an  
Repetive peak reverse voltage  
Periodische Spitzensperrspannung  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
V
RRM [V]  
V
RSM [V]  
Anode  
Cathode  
KYZ35K05  
KYZ35K1  
KYZ35K2  
KYZ35K3  
KYZ35K4  
KYZ35K6  
KYZ35A05  
KYZ35A1  
KYZ35A2  
KYZ35A3  
KYZ35A4  
KYZ35A6  
50  
60  
100  
200  
300  
400  
600  
120  
240  
360  
480  
700  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
IFRM  
IFSM  
i2t  
35 A  
130 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
360/400 A  
660 A2s  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+175°C  
-50...+175°C  
1
Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6  
Characteristics  
Kennwerte  
Forward Voltage  
Durchlass-Spannung  
Tj = 25°C IF = 35 A  
Tj = 25°C VR = VRRM  
VF  
IR  
< 1.1 V  
< 100 µA  
< 0.8 K/W  
Leakage Current  
Sperrstrom  
Thermal Resistance Junction – Case  
RthC  
Wärmewiderstand Sperrschicht – Gehäuse  
103  
120  
[%]  
[A]  
102  
100  
80  
60  
40  
20  
Tj = 125°C  
Tj = 25°C  
10  
1
IF  
IFAV  
0
360a-(35a-1,1v)  
10-1  
0.4  
1.0  
1.4  
VF 0.8  
1.2  
[V] 1.8  
0
TC  
100  
150  
50  
[°C]  
Forward characteristics (typical values)  
Durchlasskennlinien (typische Werte)  
Rated forward current versus case temperature  
Zul. Richtstrom in Abh. von der Gehäusetemp.  
103  
[A]  
102  
îF  
10  
1
10  
Peak forward surge current versus number of cycles at 50 Hz  
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz  
102  
[n]  
103  
© Diotec Semiconductor AG  
http://www.diotec.com/  
2
厂商 型号 描述 页数 下载

DIOTEC

KYZ25A05 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

SEMIKRON

KYZ25A05 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

SEMIKRON

KYZ25A05_06 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

DIOTEC

KYZ25A05_07 硅压入二极管 - 高温二极管Silizium - Einpress - Dioden - Hochtemperatur - Dioden[ Silicon-Press-Fit-Diodes - High Temperature Diodes Silizium-Einpress-Dioden - Hochtemperatur-Dioden ] 2 页

DIOTEC

KYZ25A1 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

SEMIKRON

KYZ25A1 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

DIOTEC

KYZ25A2 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

SEMIKRON

KYZ25A2 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

DIOTEC

KYZ25A3 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

SEMIKRON

KYZ25A3 硅压入二极管[ Silicon Press-Fit-Diodes ] 2 页

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