Advance Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
IXFH 28N50F VDSS
IXFT 28N50F ID25
= 500V
= 28A
RDS(on) = 190mΩ
t ≤ 250 ns
rr
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
TO-247AD(IXFH)
Symbol
TestConditions
Maximum Ratings
(TAB)
VDSS
VDGR
T
T
= 25°C to 150°C
= 25°C to 150°C; R = 1 MΩ
500
500
V
V
J
J
GS
VGS
VGSM
Continuous
Transient
±20
±30
V
V
TO-268 (IXFT) Case Style
ID25
IDM
IAR
T
= 25°C
28
112
28
A
A
A
C
T
= 25°C, pulse width limited by T
= 25°C
C
JM
T
C
G
(TAB)
=
S
EAR
EAS
T
= 25°C
= 25°C
35
1.5
mJ
J
C
T
C
G
S
=
Gate,D
Source,TAB
Drain,
Drain
dv/dt
I
≤ I , di/dt ≤ 100 A/µs, V ≤ V
10
V/ns
S
DM
DD
DSS
=
=
T
≤ 150°C, R = 2 Ω
J
G
PD
TJ
T
= 25°C
315
W
C
Features
RF capable MOSFETs
l
-55 ... +150
°C
l
l
l
l
Double metal process for low gate
resistance
UnclampedInductiveSwitching(UIS)
rated
TJM
Tstg
150
-55 ... +150
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mountingtorque
TO-247
1.13/10 Nm/lb.in.
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Weight
TO-247
TO-268
6
4
g
g
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
Symbol
VDSS
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
J
l
DC choppers
min. typ. max.
l
13.5 MHz industrial applications
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 4mA
500
2.0
V
V
l
Pulse generation
l
VGS(th)
IGSS
4.0
Laser drivers
l
RF amplifiers
V
= ±20 V, V = 0
±100 nA
GS
DS
Advantages
l
Space savings
IDSS
V
V
= V
= 0 V
50 µA
1.5 mA
DS
DSS
T
= 125°C
l
GS
J
High power density
RDS(on)
V
Note 1
= 10 V, I = 0.5 I
190 mΩ
GS
D
D25
98883 (1/02)
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