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FZ1600R17KE3

型号：

FZ1600R17KE3

描述：

IGBT逆变器[ IGBT-inverter ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

8 页

PDF大小：

255 K

下载PDF手册
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1600R17KE3  
Vorläufige Daten  
preliminary data  
IGBT-Wechselrichter / IGBT-inverter  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1700  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C  
T† = 25°C  
I† ÒÓÑ  
I†  
1600  
2300  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms, T† = 80°C  
T† = 25°C  
I†ç¢  
PÚÓÚ  
3200  
8,95  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 1600 A, V•Š = 15 V, TÝÎ = 25°C  
I† = 1600 A, V•Š = 15 V, TÝÎ = 125°C  
V†Š ÙÈÚ  
2,00 2,45  
2,40  
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 64,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•ŠÚÌ  
Q•  
5,2  
5,8  
19,0  
1,0  
6,4  
V
µC  
Â
Gateladung  
gate charge  
V•Š = -15 V ... +15 V  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
145  
4,70  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V, R•ÓÒ = 0,9 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 0,9 Â, TÝÎ = 125°C  
tÁ ÓÒ  
tØ  
0,54  
0,58  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V, R•ÓÒ = 0,9 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 0,9 Â, TÝÎ = 125°C  
0,16  
0,17  
µs  
µs  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V, R•ÓËË = 1,1 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 1,1 Â, TÝÎ = 125°C  
tÁ ÓËË  
tË  
1,30  
1,50  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V, R•ÓËË = 1,1 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 1,1 Â, TÝÎ = 125°C  
0,15  
0,27  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 1600 A, V†Š = 900 V, L» = 50 nH  
V•Š = ±15 V, R•ÓÒ = 0,9 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 0,9 Â, TÝÎ = 125°C  
EÓÒ  
EÓËË  
290  
440  
mJ  
mJ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 1600 A, V†Š = 900 V, L» = 50 nH  
V•Š = ±15 V, R•ÓËË = 1,1 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 1,1 Â, TÝÎ = 125°C  
435  
585  
mJ  
mJ  
Kurzschlußverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎù125°C, V†† = 1000 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
6100  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
RÚ̆™  
14,0 K/kW  
K/kW  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
9,00  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Wölz  
date of publication: 2003-4-11  
revision: 2.0  
approved by: Christoph Lübke  
1
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1600R17KE3  
Vorläufige Daten  
preliminary data  
Diode-Wechselrichter / diode-inverter  
Höchstzulässige Werte / maximum rated values  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
TÝÎ = 25°C  
Vçç¢  
IŒ  
1700  
1600  
3200  
335  
V
A
Dauergleichstrom  
DC forward current  
Periodischer Spitzenstrom  
t« = 1 ms  
IŒç¢  
I²t  
A
repetitive peak forward current  
Grenzlastintegral  
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  
I²t - value  
kA²s  
Charakteristische Werte / characteristic values  
min. typ. max.  
Durchlassspannung  
forward voltage  
IŒ = 1600 A, V•Š = 0 V, TÝÎ = 25°C  
IŒ = 1600 A, V•Š = 0 V, TÝÎ = 125°C  
VŒ  
Iç¢  
QØ  
1,80 2,20  
1,90  
V
V
Rückstromspitze  
peak reverse recovery current  
IŒ = 1600 A, - diŒ/dt = 8700 A/µs  
Vç = 900 V, V•Š = -15 V, TÝÎ = 25°C  
Vç = 900 V, V•Š = -15 V, TÝÎ = 125°C  
1450  
1700  
A
A
Sperrverzögerungsladung  
recovered charge  
IŒ = 1600 A, -diŒ/dt = 8700 A/µs  
Vç = 900 V, V•Š = -15 V, TÝÎ = 25°C  
Vç = 900 V, V•Š = -15 V, TÝÎ = 125°C  
385  
670  
µC  
µC  
Abschaltenergie pro Puls  
reverse recovery energy  
IŒ = 1600 A, -diŒ/dt = 8700 A/µs  
Vç = 900 V, V•Š = -15 V, TÝÎ = 25°C  
Vç = 900 V, V•Š = -15 V, TÝÎ = 125°C  
EØþÊ  
255  
455  
mJ  
mJ  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Diode  
per diode  
RÚÌœ†  
RÚ̆™  
32,0 K/kW  
K/kW  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Diode / per diode  
/
20,0  
ð«ÈÙÚþ = 1 W/(m·K)  
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Wölz  
date of publication: 2003-4-11  
revision: 2.0  
approved by: Christoph Lübke  
2
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1600R17KE3  
Vorläufige Daten  
preliminary data  
Modul / module  
Isolations-Prüfspannung  
RMS, f = 50 Hz, t = 1 min.  
insulation test voltage  
Vš»¥¡  
3,4  
Cu  
kV  
Material Modulgrundplatte  
material of module baseplate  
Material für innere Isolation  
material for internal insulation  
AlèOé  
Kriechstrecke  
creepage distance  
Kontakt - Kühlkörper / terminal to heatsink  
Kontakt - Kontakt / terminal to terminal  
32,0  
32,0  
mm  
mm  
Luftstrecke  
clearance distance  
Kontakt - Kühlkörper / terminal to heatsink  
Kontakt - Kontakt / terminal to terminal  
19,0  
19,0  
Vergleichszahl der Kriechwegbildung  
comparative tracking index  
CTI  
> 400  
min. typ. max.  
6,00  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Modul / per module  
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)  
RÚ̆™  
LÙ†Š  
K/kW  
nH  
Modulinduktivität  
stray inductance module  
12  
Modulleitungswiderstand,  
Anschlüsse - Chip  
module lead resistance,  
terminals - chip  
T† = 25°C, pro Zweig / per arm  
R††óôŠŠó  
0,19  
m  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
TÝÎ ÑÈà  
TÝÎ ÓÔ  
TÙÚÃ  
150  
°C  
°C  
°C  
Temperatur im Schaltbetrieb  
temperature under switching conditions  
-40  
-40  
125  
125  
Lagertemperatur  
storage temperature  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
Schraube / screw M6  
M
M
4,25  
-
5,75 Nm  
2,1 Nm  
Anzugsdrehmoment f. elektr. Anschlüsse Schraube / screw M4  
terminal connection torque  
1,8  
8,0  
-
-
Schraube / screw M8  
10  
Nm  
Gewicht  
weight  
G
1500  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine  
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.  
This technical information specifies semiconductor devices but guarantees no characteristics.  
It is valid with the appropriate technical explanations.  
prepared by: Martin Wölz  
date of publication: 2003-4-11  
revision: 2.0  
approved by: Christoph Lübke  
3
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1600R17KE3  
Vorläufige Daten  
preliminary data  
Ausgangskennlinie IGBT-Wechselr. (typisch)  
output characteristic IGBT-inverter (typical)  
I† = f (V†Š)  
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)  
output characteristic IGBT-inverter (typical)  
I† = f (V†Š)  
V•Š = 15 V  
TÝÎ = 125°C  
3200  
3200  
TÝÎ = 25°C  
TÝÎ = 125°C  
V•Š = 20V  
V•Š = 15V  
2800  
2800  
V•Š = 12V  
V•Š = 10V  
V•Š = 9V  
V•Š = 8V  
2400  
2000  
1600  
1200  
800  
400  
0
2400  
2000  
1600  
1200  
800  
400  
0
0,0  
0,5  
1,0  
1,5  
2,0  
V†Š [V]  
2,5  
3,0  
3,5  
4,0  
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0  
V†Š [V]  
Übertragungscharakteristik IGBT-Wechselr. (typisch)  
transfer characteristic IGBT-inverter (typical)  
I† = f (V•Š)  
Schaltverluste IGBT-Wechselr. (typisch)  
switching losses IGBT-inverter (typical)  
EÓÒ = f (I†), EÓËË = f (I†)  
V†Š = 20 V  
V•Š = ±15 V, R•ÓÒ = 0,9 Â, R•ÓËË = 1,1 Â, V†Š = 900 V,  
TÝÎ = 125°C  
3200  
1400  
TÝÎ = 25°C  
TÝÎ = 125°C  
EÓÒ  
EÓËË  
2800  
1200  
1000  
800  
600  
400  
200  
0
2400  
2000  
1600  
1200  
800  
400  
0
5
6
7
8
9
V•Š [V]  
10  
11  
12  
13  
0
400 800 1200 1600 2000 2400 2800 3200  
I† [A]  
prepared by: Martin Wölz  
date of publication: 2003-4-11  
revision: 2.0  
approved by: Christoph Lübke  
4
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1600R17KE3  
Vorläufige Daten  
preliminary data  
Schaltverluste IGBT-Wechselr. (typisch)  
switching losses IGBT-Inverter (typical)  
EÓÒ = f (R•), EÓËË = f (R•)  
Transienter Wärmewiderstand IGBT-Wechselr.  
transient thermal impedance IGBT-inverter  
ZÚÌœ† = f (t)  
V•Š = ±15 V, I† = 1600 A, V†Š = 900 V, TÝÎ = 125°C  
2600  
100  
2400  
EÓÒ  
EÓËË  
ZÚÌœ† : IGBT  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
10  
600  
i:  
1
2
3
rÍ[K/kW]: 4,9 4,9 2,8 1,4  
4
400  
τÍ[s]:  
0,02 0,06 0,1 0,3  
200  
0
1
0
1
2
3
4 5  
R• [Â]  
6
7
8
9
0,001  
0,01  
0,1  
t [s]  
1
10  
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)  
reverse bias safe operating area IGBT-inv. (RBSOA)  
I† = f (V†Š)  
Durchlaßkennlinie der Diode-Wechselr. (typisch)  
forward characteristic of diode-inverter (typical)  
IŒ = f (VŒ)  
V•Š = ±15 V, R•ÓËË = 1,1 Â, TÝÎ = 125°C  
3600  
3200  
2800  
2400  
2000  
1600  
1200  
3200  
TÝÎ = 25°C  
TÝÎ = 125°C  
2800  
2400  
2000  
1600  
1200  
800  
400  
0
800  
I†, Chip  
I†, Modul  
400  
0
0
200 400 600 800 1000 1200 1400 1600 1800  
V†Š [V]  
0,0  
0,5  
1,0  
1,5  
VŒ [V]  
2,0  
2,5  
3,0  
prepared by: Martin Wölz  
date of publication: 2003-4-11  
revision: 2.0  
approved by: Christoph Lübke  
5
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1600R17KE3  
Vorläufige Daten  
preliminary data  
Schaltverluste Diode-Wechselr. (typisch)  
switching losses diode-inverter (typical)  
EØþÊ = f (IŒ)  
Schaltverluste Diode-Wechselr. (typisch)  
switching losses diode-inverter (typical)  
EØþÊ = f (R•)  
R•ÓÒ = 0,9 Â, V†Š = 900 V, TÝÎ = 125°C  
IŒ = 1600 A, V†Š = 900 V, TÝÎ = 125°C  
600  
550  
EØþÊ  
EØþÊ  
500  
500  
450  
400  
350  
300  
250  
200  
150  
400  
300  
200  
100  
0
0
400 800 1200 1600 2000 2400 2800 3200  
IŒ [A]  
0
1
2
3
4 5  
R• [Â]  
6
7
8
9
Transienter Wärmewiderstand Diode-Wechselr.  
transient thermal impedance diode-inverter  
ZÚÌœ† = f (t)  
100  
ZÚÌœ† : Diode  
10  
i:  
1
2
3
rÍ[K/kW]: 11,2 11,2 6,4 3,2  
4
τÍ[s]:  
0,02 0,06 0,1 0,3  
1
0,001  
0,01  
0,1  
t [s]  
1
10  
prepared by: Martin Wölz  
date of publication: 2003-4-11  
revision: 2.0  
approved by: Christoph Lübke  
6
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FZ1600R17KE3  
Vorläufige Daten  
preliminary data  
Schaltplan / circuit diagram  
Gehäuseabmessungen / package outlines  
prepared by: Martin Wölz  
date of publication: 2003-4-11  
revision: 2.0  
approved by: Christoph Lübke  
7
Terms & Conditions of Usage  
Attention  
The present product data is exclusively subscribed to technically experienced  
staff. This Data Sheet is describing the specification of the products for which a  
warranty is granted exclusively pursuant the terms and conditions of the supply  
agreement. There will be no guarantee of any kind for the product and its  
specifications. Changes to the Data Sheet are reserved.  
You and your technical departments will have to evaluate the suitability of the  
product for the intended application and the completeness of the product data  
with respect to such application. Should you require product information in  
excess of the data given in the Data Sheet, please contact your local Sales Office  
via “www.eupec.com / sales & contact”.  
Warning  
Due to technical requirements the products may contain dangerous substances.  
For information on the types in question please contact your local Sales Office via  
“www.eupec.com / sales & contact”.  
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