Diode Module
6R1MBi100P-160
Diode Module with Brake
Diode:1600V / 100A, IGBT:1400A/75A
Features
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Symbol
VRRM
VRSM
IO
Condition
Rating
1600
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
1760
100
V
50Hz/60Hz sine wave
Tc=110°C
A
One cycle surge current
I2t
From rated load
From rated load
1000
4000
IFSM
I2t
A
A2s
Operation junction temperature
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-40 to +125
1400
Tj
°C
V
VCES
VGES
IC
±20
V
DC
Tc=25°C
75
A
Tc=75°C
Tc=25°C
Tc=75°C
50
1ms
150
ICP
A
100
Collector power disspation
1 device
360
PC
W
V
Repetitive peak reverse voltage
Operation junction temperature
1400
VRRM
Tj
+150
°C
°C
V
AC : 1 minute
M5 screw
-40 to +125
2500
Tstg
Viso
Storage junction temperature
Isolation voltage
2.0 to 2.5
N·m
Mounting screw torque
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
1.30
20
Unit
Fofward voltage
VFM
V
Tj=25°C, IFM=100A
Tj=150°C, VR=VRRM
VGE=0V. VCE=1400V
VCE=0V. VGE=±20V
VGE=15V. IC=50A
Vcc=800V
Reverse current
IRRM
ICES
IGES
VCE(sat)
ton
mA
mA
nA
V
Zero gate voltage Collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
1.0
200
2.8
2.4
0.35
0.25
0.45
0.08
1.2
µs
tr
0.6
Ic=50A
Turn-off time
toff
tf
1.0
VGE=±15V
0.3
RG=25ohm
Reverse current
IRRM
1.0
mA
Thermal characteristics
Item
Symbol
Condition
Min.
Typ.
Max.
0.14
0.84
0.55
0.08
Unit
Converter Per total loss
Per each device
°C/W
Thermal resistance
Rth(j-c)
Brake IGBT (1 device)
with thermal compound
°C/W
Thermal Resistance(Case to fine)
Rth(c-f)
