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IXFX26N90

型号：

IXFX26N90

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

118 K

下载PDF手册
HiPerFETTM Power MOSFETs  
VDSS IDSS RDS(on)  
trr  
900 V 26 A 0.30 W 250 ns  
900 V 25 A 0.33 W 250 ns  
IXFK/IXFX26N90  
IXFK/IXFX25N90  
Single MOSFET Die  
Preliminary data sheet  
Symbol  
TestConditions  
MaximumRatings  
PLUS 247TM (IXFX)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
900  
900  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
G
D
S
ID25  
IDM  
IAR  
TC = 25°C  
26N90  
25N90  
26N90  
25N90  
26N90  
25N90  
26  
25  
104  
100  
26  
A
A
A
TO-264 AA (IXFK)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
25  
G
(TAB)  
D
S
EAR  
EAS  
TC = 25°C  
TC = 25°C  
64  
3
mJ  
J
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
Features  
PD  
TJ  
TC = 25°C  
560  
W
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
• Lowpackageinductance  
- easy to drive and to protect  
• Fastintrinsicrectifier  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-264  
0.4/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
• DC-DC converters  
• Batterychargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 3mA  
900  
3.0  
V
V
• ACmotorcontrol  
• Temperatureandlightingcontrols  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
5.0  
VGS = ±20 V, VDS = 0  
±200 nA  
100 mA  
Advantages  
• PLUS 247TM package for clip or spring  
mounting  
IDSS  
VDS = 0.8 •VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
• Space savings  
• Highpowerdensity  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
26N90  
25N90  
0.3  
0.33  
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98553D(9/99)  
1 - 4  
IXFK 25N90 IXFX 25N90  
IXFK 26N90 IXFX 26N90  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM (IXFX) Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 1  
18  
28  
S
Ciss  
Coss  
Crss  
8.7  
10.8 nF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
800 1000 pF  
300  
375 pF  
td(on)  
tr  
td(off)  
tf  
60  
35  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 W (External),  
130  
24  
Dim.  
Millimeter  
Min. Max. Min. Max.  
Inches  
Qg(on)  
Qgs  
240  
56  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
107  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
RthJC  
RthCK  
0.22 K/W  
K/W  
0.15  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
Symbol  
IS  
TestConditions  
VGS = 0 V  
26N90  
25N90  
26  
25  
A
A
TO-264 AA (IXFK) Outline  
ISM  
Repetitive;  
26N90  
25N90  
104  
100  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = IS, -di/dt = 100 A/ms, VR = 100 V  
QRM  
IRM  
1.4  
10  
mC  
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
0.53  
25.91 26.16  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFK 25N90 IXFX 25N90  
IXFK 26N90 IXFX 25N90  
Figure 1. Output Characteristics at 25OC  
Figure 2. Extended Output Characteristics at 125OC  
50  
20  
15  
10  
5
T
= 25°C  
V
= 9V  
J
GS  
T
= 25°C  
V
= 9V  
8V  
J
GS  
8V  
7V  
6V  
40  
30  
20  
10  
0
7V  
6V  
5V  
4V  
5V  
4V  
0
0
4
8
12  
16  
20  
0
2
4
6
8
10  
VCE - Volts  
VDS - Volts  
Figure 4. Admittance Curves  
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID  
30  
25  
30  
25  
20  
15  
10  
5
V
= 9V  
GS  
T
= 125°C  
J
8V  
7V  
6V  
5V  
20  
TJ = 125OC  
15  
TJ = 25OC  
10  
5
4V  
0
0
0
5
10  
15  
VDS - Volts  
20  
25  
2
3
4
5
6
7
VGS - Volts  
Figure 6. RDS(on) normalized to 0.5 ID25 value vs.  
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID  
T
2.J4  
2.4  
V
= 10V  
GS  
V
= 10V  
GS  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
I
= 26A  
= 13A  
D
T
= 125°C  
J
I
D
T
= 25°C  
J
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
TJ - Degrees C  
ID - Amperes  
© 2000 IXYS All rights reserved  
3 - 4  
IXFK 25N90 IXFX 25N90  
IXFK 26N90 IXFX 26N90  
Figure 7. Gate Charge  
Figure 8. Capacitance Curves  
20000  
10000  
15  
12  
9
Ciss  
V
= 500 V  
= 13 A  
= 10 mA  
DS  
D
G
I
I
f = 1MHz  
Coss  
Crss  
1000  
100  
6
3
0
0
5
10 15 20 25 30 35 40  
0
50 100 150 200 250 300 350  
VDS - Volts  
Gate Charge - nC  
Figure 9. Forward Voltage Drop of the Intrinsic  
Diode  
Figure10. Drain Current vs. Case  
Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
IXF_26N90  
IXF_25N90  
o
T
= 125 C  
J
o
= 25 C  
T
J
0
0
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
-50 -25  
0
25  
50  
75  
1 00 1 25 1 50  
Case Temperature - oC  
VSD - Volts  
Figure 11. Transient Thermal Resistance  
0. 300  
0.100  
0.010  
0.001  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
© 2000 IXYS All rights reserved  
4 - 4  
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