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5STP45Q2200

型号:

5STP45Q2200

描述:

相位控制晶闸管[ Phase Control Thyristor ]

品牌:

ABB[ THE ABB GROUP ]

页数:

6 页

PDF大小:

227 K

VDSM  
ITAVM  
ITRMS  
ITSM  
VT0  
=
=
=
2800 V  
5490 A  
8625 A  
Phase Control Thyristor  
= 75000 A  
5STP 45Q2800  
=
=
0.86 V  
0.070  
rT  
mW  
Doc. No. 5SYA1050-01 Sep.00  
· Patented free-floating silicon technology  
· Low on-state and switching losses  
· Designed for traction, energy and industrial applications  
· Optimum power handling capability  
· Interdigitated amplifying gate.  
Blocking  
Conditions  
Part Number  
5STP 45Q2800  
5STP 45Q2600  
5STP 45Q2200  
VDRM  
VRSM1  
IDRM  
VRRM  
2800 V  
3000 V  
2600 V  
2800 V  
2200 V  
2400 V  
f = 50 Hz, tp = 10ms  
tp = 5 ms, single pulse  
VDRM  
£ 400 mA  
£ 400 mA  
1000 V/µs  
IRRM  
VRRM  
@ Exp. to 0.67xVDRM  
Tj = 125°C  
dV/dtcrit  
Mechanical data  
FM  
Mounting force  
nom.  
min.  
90 kN  
81 kN  
max.  
108 kN  
a
Acceleration  
Device unclamped  
Device clamped  
Weight  
50 m/s2  
100 m/s2  
2.1 kg  
m
DS  
Da  
Surface creepage distance  
Air strike distance  
36 mm  
15 mm  
ABB Semiconductors AG reserves the right to change specifications without notice.  
5STP 45Q2800  
On-state  
ITAVM  
ITRMS  
ITSM  
Max. average on-state current  
5490 A  
8625 A  
Half sine wave, TC = 70°C  
Max. RMS on-state current  
Max. peak non-repetitive  
surge current  
75000 A  
79000 A  
28125 kA2s  
25900 kA2s  
1.29 V  
tp  
tp  
tp  
tp  
IT  
=
=
=
=
=
=
10 ms  
8.3 ms  
Tj =  
125°C  
After surge:  
I2t  
Limiting load integral  
10 ms  
VD = VR = 0V  
8.3 ms  
VT  
On-state voltage  
6000 A  
VT0  
rT  
Threshold voltage  
Slope resistance  
0.86 V  
IT  
3000 - 9000 A  
Tj =  
125°C  
0.070  
mW  
IH  
Holding current  
40-100 mA  
20-75 mA  
Tj  
Tj  
Tj  
Tj  
= 25°C  
= 125°C  
= 25°C  
= 125°C  
IL  
Latching current  
100-500 mA  
150-350 mA  
Switching  
di/dtcrit  
Critical rate of rise of on-state  
250 A/µs Cont.  
Tj = 125°C  
VD £ 0.67×VDRM  
current  
500 A/µs 60 sec.  
ITRM  
=
=
=
=
>
3000 A f = 50 Hz  
2.0 A tr = 0.5 µs  
2.0 A tr = 0.5 µs  
3000 A Tj = 125°C  
200 V  
IFG  
td  
tq  
Delay time  
3.0 µs  
IFG  
£
£
VD = 0.4×VDRM  
VD £ 0.67×VDRM  
Turn-off time  
400 µs  
ITRM  
dvD/dt = 20V/µs VR  
Qrr  
Recovery charge  
min  
4200 µAs  
6500 µAs  
diT/dt =  
-5 A/µs  
max  
Triggering  
VGT  
Gate trigger voltage  
2.6 V  
Tj = 25°C  
IGT  
Gate trigger current  
400 mA Tj = 25°C  
VGD  
IGD  
Gate non-trigger voltage  
Gate non-trigger current  
Peak forward gate voltage  
Peak forward gate current  
Peak reverse gate voltage  
Maximum gate power loss  
0.3 V  
10 mA  
12 V  
10 A  
10 V  
3 W  
VD  
VD  
=
=
0.4×VDRM  
0.4×VDRM  
VFGM  
IFGM  
VRGM  
PG  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1050-01 Sep.00  
2 of 6  
5STP 45Q2800  
Thermal  
Tj max  
Max. junction temperature  
125°C  
Tj stg  
Storage temperature  
range  
-40...150°C  
RthJC  
Thermal resistance  
10 K/kW  
10 K/kW  
5 K/kW  
2 K/kW  
1 K/kW  
Anode side cooled  
Cathode side cooled  
Double side cooled  
Single side cooled  
Double side cooled  
junction to case  
RthCH  
Thermal resistance case to  
heat sink  
Analytical function for transient thermal impedance:  
n
Z
thJC(t) = R  
i
(1-e-t/t i )  
å
i=1  
i
1
2
3
4
Ri(K/kW)  
3.27  
0.736  
0.661  
0.02  
0.312  
0.5237  
0.1082  
0.0075  
t i(s)  
Fig. 1 Transient thermal impedance junction to case.  
On-state characteristic model:  
VT = A + B×iT +C ×ln(iT +1) + D× IT  
Valid for iT = 500 – 15000 A  
A
B
C
D
-0.096289  
0.000051  
0.135731  
-0.001358  
Fig 2. On-state characteristics.  
Fig. 3 On state characteristics.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1050-01 Sep.00  
3 of 6  
5STP 45Q2800  
Tcase (°C)  
130  
Double-sided cooling  
125  
120  
115  
110  
105  
100  
95  
DC  
180° rectangular  
180° sine  
120° rectangular  
90  
85  
80  
75  
70  
0
1000 2000 3000 4000 5000 6000 7000 8000  
ITAV (A)  
On-state power dissipation vs. mean on-  
state current. Turn-on losses excluded.  
Max. permissible case temperature vs. mean  
on-state current.  
Fig. 4  
Fig. 5  
Surge on-state current vs. pulse length.  
Half-sine wave.  
Surge on-state current vs. number of pulses.  
Half-sine wave, 10 ms, 50Hz.  
Fig. 6  
Fig. 7  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1050-01 Sep.00  
4 of 6  
5STP 45Q2800  
Gate trigger characteristics.  
Max. peak gate power loss.  
Fig. 8  
Fig. 9  
Recovery charge vs. decay rate of on-state  
current.  
Peak reverse recovery current vs. decay rate  
of on-state current.  
Fig. 10  
Fig. 11  
Turn –off time, typical parameter relationship.  
Fig. 12  
Fig. 13  
Fig. 14  
tq/tq1 = f1(Tj)  
tq/tq1 = f2(-di/dt)  
tq/tq1 = f3(dv/dt)  
tq1 :at normalized values (see page 2)  
tq : at varying conditions  
tq = tq1 · tq/tq1 f1(Tj) · tq/tq1 f2(-di/dt) · tq/tq1 f3(dv/dt)  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1050-01 Sep.00  
5 of 6  
5STP 45Q2800  
Turn-on and Turn-off losses  
Won = f(IT, tP), Tj = 125°C.  
Half sinusoidal waves.  
Won = f(IT, di/dt), Tj = 125°C.  
Rectangular waves.  
Fig. 15  
Fig. 16  
Woff = f(V0,IT), Tj = 125°C.  
Woff = f(V0,di/dt), Tj = 125°C.  
Rectangular waves.  
Fig. 17  
Fig. 18  
Half sinusoidal waves. tP = 10 ms.  
ABB Semiconductors reserves the right to change specifications without notice.  
ABB Semiconductors AG  
Fabrikstrasse 3  
Doc. No. 5SYA1050-01 Sep.00  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)62 888 6419  
Fax  
Email  
Internet  
+41 (0)62 888 6306  
Info@ch.abb.com  
www.abbsem.com  
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