ITAVM
ITRMS
ITSM
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Phase Control Thyristor
5STP 04D5200
1.6
mΩ
Doc. No. 5SYA1026-04 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol
Conditions
5STP 04D5200 5STP 04D5000 5STP 04D4600
VDSM, VRSM f = 5 Hz, tp = 10ms, Tj = 125°C
VDRM, VRRM f = 50 Hz, tp = 10ms, Tj = 125°C
5200 V
4400 V
5700 V
5000 V
4200 V
5500 V
1000 V/µs
4600 V
4000 V
5100 V
VRSM1
dV/dtcrit
tp = 5ms, single pulse, Tj = 125°C
Exp. to 0.67 x VDRM, Tj = 125°C
Characteristic values
Parameter
Symbol Conditions
IDSM VDSM, Tj = 125°C
IRSM VRSM, Tj = 125°C
min
min
typ
max
100
100
Unit
mA
mA
Forwarde leakage current
Reverse leakage current
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
typ
max
Unit
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
FM
a
a
8
10
12
50
100
kN
Device unclamped
Device clamped
m/s2
m/s2
Symbol Conditions
min
typ
max
Unit
Weight
m
0.3
kg
Surface creepage distance
Air strike distance
DS
Da
25
14
mm
mm
1) Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
