5STB 18N4200
On-state
ITAVM
Max. average on-state
1920 A
3020 A
Half sine wave, TC = 70°C
ITRMS
Max. RMS on-state current
ITSM
Max. peak non-repetitive
surge current
32000 A
35000 A
5120 kA2s
5000 kA2s
1.53 V
tp
tp
tp
tp
IT
=
=
=
=
=
=
8.3 ms After surge:
10 ms VD = VR = 0V
8.3 ms
I2t
Limiting load integral
VT
VT0
rT
On-state voltage
Threshold voltage
Slope resistance
Holding current
2000 A
0.96 V
IT
1000 - 3000 A Tj = 125°C
0.285
mΩ
IH
50-250 mA
25-150 mA
100-500 mA
50-300 mA
Tj
Tj
Tj
Tj
= 25°C
= 125°C
= 25°C
= 125°C
IL
Latching current
Switching
di/dtcrit Critical rate of rise of on-state
current
250 A/µs Cont. f = 50 Hz
VD ≤ 0.67⋅VDRM , Tj = 125°C
ITRM = 3000 A
500 A/µs 60 sec.
f = 50Hz
IFG = 2 A, tr = 0.5 µs
IFG = 2 A, tr = 0.5 µs
ITRM = 3000 A, Tj = 125°C
td
tq
Delay time
3.0 µs
≤
≤
VD = 0.4⋅VDRM
VD ≤ 0.67⋅VDRM
Turn-off time
550 µs
dvD/dt = 20V/µs VR > 200 V, diT/dt = -1.5 A/µs
Qrr
Recovery charge
min
2100 µAs
3200 µAs
max
Triggering
VGT
IGT
Gate trigger voltage
Gate trigger current
2.6 V
Tj = 25°C
≤
≤
≥
≥
400 mA Tj = 25°C
VGD
IGD
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Maximum gate power loss
0.3 V
10 mA
12 V
10 A
10 V
3 W
Tj = 125°C
Tj = 125°C
VD = 0.4⋅VRM
VD = 0.4⋅VRM
VFGM
IFGM
VRGM
PG
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1040-03 Sep. 01
page 2 of 5
