5SMX 12N4507
2)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
4500
V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
3.0
4.0
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 40 A, VGE = 15 V
100
µA
µA
nA
V
Collector cut-off current
ICES
VCE = 4500 V, VGE = 0 V
2500
Gate leakage current
Gate-emitter threshold voltage
Gate charge
IGES
VGE(TO)
Qge
-500
5.5
500
7.5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 10 mA, VCE = VGE, Tvj = 25 °C
IC = 40 A, VCE = 2800 V, VGE = -15 ..15 V
500
7.45
0.28
0.07
5
nC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Coes
Cres
Reverse transfer capacitance
Internal gate resistance
RGint
W
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
160
155
100
105
630
715
425
455
VCC = 2800 V, IC = 40 A,
RG = 33 W, VGE = ±15 V,
Ls = 6000 nH,
Turn-on delay time
Rise time
td(on)
ns
tr
ns
ns
ns
inductive load
VCC = 2800 V, IC = 40 A,
RG = 33 W, VGE = ±15 V,
Ls = 6000 nH,
Turn-off delay time
Fall time
td(off)
tf
inductive load
VCC = 2800 V, IC = 40 A,
VGE = ±15 V, RG = 33 W,
Ls = 6000 nH,
Tvj = 25 °C
Tvj = 125 °C
55
85
Turn-on switching energy
Turn-off switching energy
Eon
mJ
inductive load,
FWD: ½ 5SLX12N4506
VCC = 2800 V, IC = 40 A,
VGE = ±15 V, RG = 33 W,
Ls = 6000 nH,
Tvj = 25 °C
Tvj = 125 °C
165
205
200
Eoff
mJ
A
inductive load
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
Short circuit current
ISC
VCC = 3400 V, VCEM ≤ 4500 V
2)
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1626-03 July 06
page 2 of 5
