5SMX 12M6500
2)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
6500
V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
4.2
5.4
10
V
Collector-emitter
saturation voltage
VCE sat
IC = 25 A, VGE = 15 V
V
µA
Collector cut-off current
ICES
VCE = 6500 V, VGE = 0 V
4000 µA
Gate leakage current
Gate-emitter threshold voltage
Gate charge
IGES
VGE(TO)
Qge
-200
6
200
8
nA
V
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 10 mA, VCE = VGE, Tvj = 25 °C
IC = 25 A, VCE = 3600 V, VGE = -15 ..15 V
400
6.28
0.38
0.06
5
nC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Coes
Cres
Reverse transfer capacitance
Internal gate resistance
RGint
W
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
690
550
340
270
1430
1450
540
690
VCC = 3600 V, IC = 25 A,
RG = 82 W, VGE = ±15 V,
Ls = 6800 nH,
Turn-on delay time
Rise time
td(on)
ns
tr
ns
ns
ns
inductive load
VCC = 3600 V, IC = 25 A,
RG = 56 W, VGE = ±15 V,
Ls = 6800 nH,
Turn-off delay time
Fall time
td(off)
tf
inductive load
VCC = 3600 V, IC = 25 A,
VGE = ±15 V, RG = 82 W,
Ls = 6800 nH,
Tvj = 25 °C
Tvj = 125 °C
180
200
Turn-on switching energy
Eon
mJ
inductive load,
FWD: ½ 5SLX12M6500
VCC = 3600 V, IC = 25 A,
VGE = ±15 V, RG = 56 W,
Ls = 6800 nH,
Tvj = 25 °C
Tvj = 125 °C
85
Turn-off switching energy
Short circuit current
Eoff
mJ
A
130
110
inductive load
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
ISC
VCC = 4400 V, VCEM ≤ 6500 V
2)
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1627-01 Sep 05
page 2 of 5
