5SMX 12M1273
2)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
1200
V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
1.9 2.15 2.4
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 150 A, VGE = 15 V
VCE = 1200 V, VGE = 0 V
2.4
100
500
µA
µA
nA
V
Collector cut-off current
ICES
Gate leakage current
Gate-emitter threshold voltage
Gate charge
IGES
VGE(TO)
Qge
-200
4.5
200
6.5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 6 mA, VCE = VGE, Tvj = 25 °C
IC = 150 A, VCE = 600 V, VGE = -15 ..15 V
1110
10.9
0.72
0.46
3
nC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Coes
Cres
Reverse transfer capacitance
Internal gate resistance
RGint
W
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
170
200
75
VCC = 600 V, IC = 150 A,
RG = 8.2 W, VGE = ±15 V,
Ls = 60 nH,
Turn-on delay time
Rise time
td(on)
ns
tr
ns
ns
ns
inductive load
85
410
510
50
VCC = 600 V, IC = 150 A,
RG = 8.2 W, VGE = ±15 V,
Ls = 60 nH,
Turn-off delay time
Fall time
td(off)
tf
inductive load
60
VCC = 600 V, IC = 150 A,
VGE = ±15 V, RG = 8.2 W,
Ls = 60 nH,
Tvj = 25 °C
Tvj = 125 °C
14
21
Turn-on switching energy
Eon
mJ
inductive load,
FWD: 3x 5SLX 12E1200
VCC = 600 V, IC = 150 A,
VGE = ±15 V, RG = 8.2 W,
Ls = 60 nH,
Tvj = 25 °C
Tvj = 125 °C
10
15
Turn-off switching energy
Short circuit current
Eoff
mJ
A
inductive load
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
ISC
620
VCC = 900 V, VCEM ≤ 1200 V
2)
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1637-00 July 06
page 2 of 5
