5SMX 12L2511
2)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
2500
V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
2.2
2.7
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 54 A, VGE = 15 V
100
µA
µA
nA
V
Collector cut-off current
ICES
VCE = 2500 V, VGE = 0 V
1000
Gate leakage current
Gate-emitter threshold voltage
Gate charge
IGES
VGE(TO)
Qge
-500
5
500
7.5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 10 mA, VCE = VGE, Tvj = 25 °C
IC = 54 A, VCE = 1250 V, VGE = -15 ..15 V
480
6.7
nC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Coes
Cres
0.43
0.14
5
Reverse transfer capacitance
Internal gate resistance
RGint
W
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
350
350
280
280
810
910
370
430
VCC = 1250 V, IC = 54 A,
RG = 33 W, VGE = ±15 V,
Ls = 2400 nH,
Turn-on delay time
Rise time
td(on)
ns
tr
ns
ns
ns
inductive load
VCC = 1250 V, IC = 54 A,
RG = 33 W, VGE = ±15 V,
Ls = 2400 nH,
Turn-off delay time
Fall time
td(off)
tf
inductive load
VCC = 1250 V, IC = 54 A,
VGE = ±15 V, RG = 33 W,
Ls = 2400 nH,
Tvj = 25 °C
Tvj = 125 °C
36
48
Turn-on switching energy
Turn-off switching energy
Eon
mJ
inductive load,
FWD: ½ 5SLX12L2507
VCC = 1250 V, IC = 54 A,
VGE = ±15 V, RG = 33 W,
Ls = 2400 nH,
Tvj = 25 °C
Tvj = 125 °C
68
85
Eoff
mJ
A
inductive load
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
Short circuit current
ISC
250
VCC = 2000 V, VCEM ≤ 2500 V
2)
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1640-00 Mar 07
page 2 of 5
