$THYꢀ !F &ꢄ
DB7Uꢀpuhꢁhprꢁvvpꢀhyr
Qhꢁhrrꢁ
Tiy 8qvv
v h Vv
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
1700
2.1
V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
2.3
2.6
2.7
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 75 A, VGE = 15 V
100
µA
µA
nA
V
Collector cut-off current
ICES
VCE = 1700 V, VGE = 0 V
800
Gate leakage current
Gate-emitter threshold voltage
Gate charge
IGES
VGE(TO)
Qge
-500
4.5
500
6.5
VCE = 0 V, VGE = 20 V, Tvj = 125 °C
IC = 3 mA, VCE = VGE, Tvj = 25 °C
IC = 75 A, VCE = 900 V, VGE = -15 ..15 V
630
6.9
nC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
Output capacitance
Coes
Cres
0.48
0.29
5
nF
Reverse transfer capacitance
Internal gate resistance
RGint
Ω
Tvj = 25 °C
170
180
100
110
420
500
90
VCC = 900 V, IC = 75 A,
Turn-on delay time
Rise time
td(on)
ns
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
RG = 15 Ω, VGE = 15 V,
Lσ = 160 nH,
inductive load
tr
ns
ns
ns
VCC = 900 V, IC = 75 A,
RG = 15 Ω, VGE = 15 V,
Lσ = 160 nH,
Turn-off delay time
Fall time
td(off)
tf
inductive load
110
VCC = 900 V, IC = 75 A,
Tvj = 25 °C
Tvj = 125 °C
18
25
VGE = ±15 V, RG = 15 Ω,
Turn-on switching energy
Eon
mJ
Lσ = 160 nH,
inductive load,
FWD: 5SLX12G1700
VCC = 900 V, IC = 75 A,
Tvj = 25 °C
Tvj = 125 °C
12
19
VGE = ±15 V, RG = 15 Ω,
Turn-off switching energy
Short circuit current
Eoff
mJ
A
Lσ = 160 nH,
inductive load
tpsc ꢀꢁꢂꢀ Vꢃꢀ9GE = 15 V, Tvj = 125 °C,
CC = 1300 V, VCEM ꢀꢁꢄꢂꢂꢀ9
ISC
350
V
677ꢀTvrꢁyhqꢀGqꢂꢀTrvpqpꢁꢀꢁrrꢁrꢀurꢀꢁvtuꢀꢀpuhtrꢀrpvsvphvꢀvuꢀvprꢃ
Doc. No. 5SYA1619-01 July 03
page 2 of 5
