5SMX 12E1273
2)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
1200
1.7
V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
2.0
2.2
2.3
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 25 A, VGE = 15 V
100
µA
µA
nA
V
Collector cut-off current
ICES
VCE = 1200 V, VGE = 0 V
100
Gate leakage current
Gate-emitter threshold voltage
Gate charge
IGES
VGE(TO)
Qge
-200
4.5
200
6.5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 1 mA, VCE = VGE, Tvj = 25 °C
IC = 25 A, VCE = 600 V, VGE = -15 ..15 V
195
2.01
0.14
0.08
10
nC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Coes
Cres
Reverse transfer capacitance
Internal gate resistance
RGint
W
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
95
VCC = 600 V, IC = 25 A,
RG = 33 W, VGE = ±15 V,
Ls = 120 nH,
Turn-on delay time
Rise time
td(on)
ns
100
70
tr
ns
ns
ns
inductive load
70
295
355
65
VCC = 600 V, IC = 25 A,
RG = 47 W, VGE = ±15 V,
Ls = 120 nH,
Turn-off delay time
Fall time
td(off)
tf
inductive load
95
VCC = 600 V, IC = 25 A,
VGE = ±15 V, RG = 33 W,
Ls = 120 nH,
Tvj = 25 °C
Tvj = 125 °C
2.1
3.2
Turn-on switching energy
Eon
mJ
inductive load,
FWD: ½ 5SLX12E1200
VCC = 600 V, IC = 25 A,
VGE = ±15 V, RG = 47 W,
Ls = 120 nH,
Tvj = 25 °C
Tvj = 125 °C
1.4
2.3
Turn-off switching energy
Short circuit current
Eoff
mJ
A
inductive load
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
ISC
140
VCC = 900 V, VCEM ≤ 1200 V
2)
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1632-00 June 05
page 2 of 5
